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Part Details for RQ3E180GNTB by ROHM Semiconductor
Overview of RQ3E180GNTB by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RQ3E180GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ3E180GNTBCT-ND
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DigiKey | MOSFET N-CH 30V 18A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4770 In Stock |
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$0.2263 / $0.6900 | Buy Now |
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DISTI #
RQ3E180GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSMT8 NCH DISCRETE - Tape and Reel (Alt: RQ3E180GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.2317 / $0.2643 | Buy Now |
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DISTI #
755-RQ3E180GNTB
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 2994 |
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$0.2260 / $0.6900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2420 | Buy Now |
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Bristol Electronics | 1407 |
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RFQ | ||
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Quest Components | 1125 |
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$0.3616 / $0.9040 | Buy Now | |
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Quest Components | 2303 |
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$0.4165 / $1.1900 | Buy Now | |
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DISTI #
RQ3E180GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSMT8 NCH DISCRETE - Tape and Reel (Alt: RQ3E180GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.2317 / $0.2643 | Buy Now |
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DISTI #
RQ3E180GNTB
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TME | Transistor: N-MOSFET, unipolar, 30V, 39A, Idm: 72A, 20W, HSMT8 Min Qty: 1 | 0 |
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$0.3000 / $0.7580 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 500-Authorized Distributor |
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$0.2820 / $0.7100 | Buy Now |
Part Details for RQ3E180GNTB
RQ3E180GNTB CAD Models
RQ3E180GNTB Part Data Attributes
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RQ3E180GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ3E180GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 18A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RQ3E180GNTB
This table gives cross-reference parts and alternative options found for RQ3E180GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3E180GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | RQ3E180GNTB vs NTMFS4985NFT3G |
| FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | RQ3E180GNTB vs FDS7068SN3 |
| RQ3E180AJTB | Power Field-Effect Transistor, 18A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN | ROHM Semiconductor | RQ3E180GNTB vs RQ3E180AJTB |
| BSC043N03MSCGATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RQ3E180GNTB vs BSC043N03MSCGATMA1 |
| QM3006D | Power Field-Effect Transistor, 17A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | UPI Semiconductor Corp | RQ3E180GNTB vs QM3006D |
| BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | RQ3E180GNTB vs BSZ0904NSI |
| BSZ0589NSATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8 | Infineon Technologies AG | RQ3E180GNTB vs BSZ0589NSATMA1 |
| NTTFS4985NFTWG | 16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | onsemi | RQ3E180GNTB vs NTTFS4985NFTWG |
| FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | RQ3E180GNTB vs FDMS8672S |
| NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | RQ3E180GNTB vs NTTFS4985NFTAG |