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Power Field-Effect Transistor, 15A I(D), 40V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ3G150GNTBCT-ND
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DigiKey | MOSFET N-CHANNEL 40V 39A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5834 In Stock |
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$0.4672 / $1.2400 | Buy Now |
DISTI #
RQ3G150GNTB
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Avnet Americas | Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$0.2765 / $0.5446 | Buy Now |
DISTI #
755-RQ3G150GNTB
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Mouser Electronics | MOSFET Nch 40V 30Aw Si MOSFET RoHS: Compliant | 3905 |
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$0.4670 / $1.2300 | Buy Now |
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Future Electronics | 40V, 39A, 7.2mohm, N-Channel, HSMT8, Middle Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4700 / $0.4950 | Buy Now |
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Quest Components | 2400 |
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$0.5790 / $1.9300 | Buy Now | |
DISTI #
RQ3G150GNTB
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TTI | MOSFET Nch 40V 30Aw Si MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 594000 In Stock |
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$0.4620 / $0.5090 | Buy Now |
DISTI #
RQ3G150GNTB
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Avnet Americas | Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
|
$0.2765 / $0.5446 | Buy Now |
DISTI #
RQ3G150GNTB
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TME | Transistor: N-MOSFET, unipolar, 40V, 39A, Idm: 60A, 20W, HSMT8 Min Qty: 1 | 0 |
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$0.3170 / $0.7610 | RFQ |
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Ameya Holding Limited | MOSFET N-CHANNEL 40V 39A 8HSMT Min Qty: 1 | 180-Authorized Distributor |
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$0.5600 / $1.2900 | Buy Now |
DISTI #
RQ3G150GNTB
|
Avnet Americas | Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
|
$0.2765 / $0.5446 | Buy Now |
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RQ3G150GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ3G150GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 15A I(D), 40V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 17 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0089 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |