Datasheets
RQ3G150GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 15A I(D), 40V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for RQ3G150GNTB by ROHM Semiconductor

Overview of RQ3G150GNTB by ROHM Semiconductor

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Price & Stock for RQ3G150GNTB

Part # Distributor Description Stock Price Buy
DISTI # RQ3G150GNTBCT-ND
DigiKey MOSFET N-CHANNEL 40V 39A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5834
In Stock
  • 1 $1.2400
  • 10 $1.0170
  • 100 $0.7911
  • 500 $0.6706
  • 1,000 $0.5463
  • 3,000 $0.5142
  • 6,000 $0.4898
  • 9,000 $0.4672
$0.4672 / $1.2400 Buy Now
DISTI # RQ3G150GNTB
Avnet Americas Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5446
  • 6,000 $0.5297
  • 12,000 $0.5147
  • 18,000 $0.4998
  • 24,000 $0.2808
  • 30,000 $0.2765
$0.2765 / $0.5446 Buy Now
DISTI # 755-RQ3G150GNTB
Mouser Electronics MOSFET Nch 40V 30Aw Si MOSFET RoHS: Compliant 3905
  • 1 $1.2300
  • 10 $1.0100
  • 100 $0.7910
  • 500 $0.6700
  • 1,000 $0.5460
  • 3,000 $0.5140
  • 6,000 $0.4890
  • 9,000 $0.4670
$0.4670 / $1.2300 Buy Now
Future Electronics 40V, 39A, 7.2mohm, N-Channel, HSMT8, Middle Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4950
  • 6,000 $0.4850
  • 9,000 $0.4700
$0.4700 / $0.4950 Buy Now
Quest Components   2400
  • 1 $1.9300
  • 1,037 $0.6755
  • 2,222 $0.5790
$0.5790 / $1.9300 Buy Now
DISTI # RQ3G150GNTB
TTI MOSFET Nch 40V 30Aw Si MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 594000
In Stock
  • 3,000 $0.5090
  • 6,000 $0.4840
  • 9,000 $0.4620
$0.4620 / $0.5090 Buy Now
DISTI # RQ3G150GNTB
Avnet Americas Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5446
  • 6,000 $0.5297
  • 12,000 $0.5147
  • 18,000 $0.4998
  • 24,000 $0.2808
  • 30,000 $0.2765
$0.2765 / $0.5446 Buy Now
DISTI # RQ3G150GNTB
TME Transistor: N-MOSFET, unipolar, 40V, 39A, Idm: 60A, 20W, HSMT8 Min Qty: 1 0
  • 1 $0.7610
  • 5 $0.4440
  • 25 $0.4000
  • 100 $0.3530
  • 500 $0.3170
$0.3170 / $0.7610 RFQ
Ameya Holding Limited MOSFET N-CHANNEL 40V 39A 8HSMT Min Qty: 1 180-Authorized Distributor
  • 1 $1.2900
  • 10 $1.1600
  • 100 $0.9010
  • 500 $0.7450
  • 1,000 $0.5880
  • 3,000 $0.5600
$0.5600 / $1.2900 Buy Now
DISTI # RQ3G150GNTB
Avnet Americas Nch 40V 30A Power MOSFET - Tape and Reel (Alt: RQ3G150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5446
  • 6,000 $0.5297
  • 12,000 $0.5147
  • 18,000 $0.4998
  • 24,000 $0.2808
  • 30,000 $0.2765
$0.2765 / $0.5446 Buy Now

Part Details for RQ3G150GNTB

RQ3G150GNTB CAD Models

RQ3G150GNTB Part Data Attributes

RQ3G150GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ3G150GNTB ROHM Semiconductor Power Field-Effect Transistor, 15A I(D), 40V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 17 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0089 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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