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Transistors / Power Field-Effect Transistors / RQ3L050GNTB
Datasheets
RQ3L050GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 60V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN

Part Details for RQ3L050GNTB by ROHM Semiconductor

Overview of RQ3L050GNTB by ROHM Semiconductor

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Price & Stock for RQ3L050GNTB

Part # Distributor Description Stock Price Buy
DISTI # RQ3L050GNTBCT-ND
DigiKey MOSFET N-CHANNEL 60V 12A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 10988
In Stock
  • 1 $0.8000
  • 10 $0.6930
  • 100 $0.4795
  • 500 $0.4006
  • 1,000 $0.3410
  • 3,000 $0.3037
  • 6,000 $0.2877
  • 9,000 $0.2664
  • 30,000 $0.2637
$0.2637 / $0.8000 Buy Now
DISTI # RQ3L050GNTB
Avnet Americas Trans MOSFET N-CH 60V ±13A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L050GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 3000
RFQ
DISTI # 755-RQ3L050GNTB
Mouser Electronics MOSFET Nch 60V 12A Si MOSFET 1684
  • 1 $0.7900
  • 10 $0.6930
  • 100 $0.4790
  • 500 $0.4000
  • 1,000 $0.3400
  • 3,000 $0.3030
  • 6,000 $0.2870
  • 9,000 $0.2660
  • 24,000 $0.2630
$0.2630 / $0.7900 Buy Now
Future Electronics MOSFET Nch 60V 12A Si MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2850
  • 6,000 $0.2800
  • 9,000 $0.2750
  • 12,000 $0.2750
  • 15,000 $0.2650
$0.2650 / $0.2850 Buy Now
Future Electronics MOSFET Nch 60V 12A Si MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2800
  • 6,000 $0.2750
  • 9,000 $0.2700
  • 12,000 $0.2700
  • 15,000 $0.2600
$0.2600 / $0.2800 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 60V, 0.086OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 715
  • 1 $0.6000
  • 151 $0.2800
  • 715 $0.2500
$0.2500 / $0.6000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 60V, 0.086OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 3383
  • 1 $1.1350
  • 353 $0.4540
  • 1,763 $0.3973
$0.3973 / $1.1350 Buy Now
DISTI # RQ3L050GNTB
Avnet Americas Trans MOSFET N-CH 60V ±13A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L050GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 3000
RFQ
DISTI # RQ3L050GNTB
TME Transistor: N-MOSFET, unipolar, 60V, 13A, Idm: 20A, 14.8W, HSMT8 Min Qty: 1 0
  • 1 $0.8710
  • 5 $0.3900
  • 25 $0.3500
  • 100 $0.3100
  • 500 $0.2780
$0.2780 / $0.8710 RFQ
DISTI # RQ3L050GNTB
Avnet Americas Trans MOSFET N-CH 60V ±13A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L050GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 3000
RFQ

Part Details for RQ3L050GNTB

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RQ3L050GNTB Part Data Attributes

Parametric Data
RQ3L050GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ3L050GNTB ROHM Semiconductor Power Field-Effect Transistor, 5A I(D), 60V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description HSMT8, 8 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 3.9 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.086 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RQ3L050GNTB

This table gives cross-reference parts and alternative options found for RQ3L050GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3L050GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NVD5490NLT4G-VF01 Power MOSFET 60V, 17A, 64 mOhm, Single N Channel, DPAK, Logic Level., 2500-REEL, Automotive Qualified onsemi RQ3L050GNTB vs NVD5490NLT4G-VF01
NVD5490NLT4G Power MOSFET 60V, 17A, 64 mOhm, Single N Channel, DPAK, Logic Level., DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL, Automotive Qualified onsemi RQ3L050GNTB vs NVD5490NLT4G
ZXMN6A08KTC Power Field-Effect Transistor, 5.36A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Diodes Incorporated RQ3L050GNTB vs ZXMN6A08KTC

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