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Power Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ3L090GNTBCT-ND
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DigiKey | MOSFET N-CH 60V 9A/30A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17700 In Stock |
|
$0.5335 / $1.4200 | Buy Now |
DISTI #
RQ3L090GNTB
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Avnet Americas | Transistor Power MOSFET N-CH 60V 30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L090GNTB) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.5453 / $0.6220 | Buy Now |
DISTI #
755-RQ3L090GNTB
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Mouser Electronics | MOSFET Nch 60V 30A Middle Power MOSFET RoHS: Compliant | 5750 |
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$0.5330 / $1.4200 | Buy Now |
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Future Electronics | N-Channel 60 V 9A (Ta), 30A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.5700 / $0.7700 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 60V, 0.0192OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1846 |
|
$0.8760 / $2.3360 | Buy Now |
DISTI #
RQ3L090GNTB
|
Avnet Americas | Transistor Power MOSFET N-CH 60V 30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L090GNTB) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.5453 / $0.6220 | Buy Now |
DISTI #
RQ3L090GNTB
|
Avnet Americas | Transistor Power MOSFET N-CH 60V 30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L090GNTB) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.5453 / $0.6220 | Buy Now |
DISTI #
4203036RL
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Farnell | MOSFET, N-CH, 60V, 30A, HSMT RoHS: Compliant Min Qty: 3000 Lead time: 27 Weeks, 1 Days Container: Reel | 0 |
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$0.5876 | Buy Now |
DISTI #
4203036
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Farnell | MOSFET, N-CH, 60V, 30A, HSMT RoHS: Compliant Min Qty: 3000 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 0 |
|
$0.5876 | Buy Now |
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RQ3L090GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ3L090GNTB
ROHM Semiconductor
Power Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 12 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.0192 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |