Part Details for RS1E170GNTB by ROHM Semiconductor
Overview of RS1E170GNTB by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
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Financial Technology (Fintech)
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Price & Stock for RS1E170GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-RS1E170GNTBCT-ND
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DigiKey | MOSFET N-CH 30V 17A 8-HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1970 In Stock |
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$0.2013 / $0.6100 | Buy Now |
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DISTI #
RS1E170GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E170GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.2093 / $0.2383 | Buy Now |
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DISTI #
755-RS1E170GNTB
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 2493 |
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$0.2030 / $0.6000 | Buy Now |
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Future Electronics | N-Channel 30 V 6.7 mOhm 23 W Surface Mount Power Mosfet - HSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2050 / $0.2200 | Buy Now |
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Future Electronics | N-Channel 30 V 6.7 mOhm 23 W Surface Mount Power Mosfet - HSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.2100 / $0.2850 | Buy Now |
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Quest Components | 2000 |
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$0.3553 / $1.0150 | Buy Now | |
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DISTI #
RS1E170GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E170GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.2093 / $0.2383 | Buy Now |
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Ameya Holding Limited | http://www.ameya360.com/product/3488236 Min Qty: 1 | 2480-Authorized Distributor |
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$0.2500 / $0.6500 | Buy Now |
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DISTI #
RS1E170GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E170GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.2093 / $0.2383 | Buy Now |
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DISTI #
RS1E170GNTB
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Avnet Asia | 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE (Alt: RS1E170GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
Part Details for RS1E170GNTB
RS1E170GNTB CAD Models
RS1E170GNTB Part Data Attributes
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RS1E170GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1E170GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 17A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0087 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RS1E170GNTB
This table gives cross-reference parts and alternative options found for RS1E170GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E170GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC059N03SGAUMA1 | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RS1E170GNTB vs BSC059N03SGAUMA1 |
| SI7686DP-T1-GE3 | Power Field-Effect Transistor, 17.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | RS1E170GNTB vs SI7686DP-T1-GE3 |
| BSC057N03LSGE8176 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RS1E170GNTB vs BSC057N03LSGE8176 |