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Transistors / Power Field-Effect Transistors / RS1E200BNTB
Datasheets
RS1E200BNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 20A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Part Details for RS1E200BNTB by ROHM Semiconductor

Overview of RS1E200BNTB by ROHM Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Space Technology Aerospace and Defense Automotive

Price & Stock for RS1E200BNTB

Part # Distributor Description Stock Price Buy
DISTI # 71Y9255
Newark Mosfet Transistor, N Channel, 20 A, 30 V, 0.0028 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Rohm RS1E200BNTB Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $0.5510
  • 10 $0.5060
  • 100 $0.4570
  • 500 $0.4230
  • 1,000 $0.3880
  • 2,500 $0.3660
  • 10,000 $0.3600
$0.3600 / $0.5510 Buy Now
DISTI # RS1E200BNTBCT-ND
DigiKey MOSFET N-CH 30V 20A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.8000
  • 10 $0.6960
  • 100 $0.4818
  • 500 $0.4025
  • 1,000 $0.3426
  • 2,500 $0.3051
  • 5,000 $0.2891
  • 12,500 $0.2676
  • 25,000 $0.2650
$0.2650 / $0.8000 Buy Now
DISTI # RS1E200BNTB
Avnet Americas Trans MOSFET N-CH 30V ±20A 8-Pin HSOP Embossed Tape and Reel - Tape and Reel (Alt: RS1E200BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3138
  • 5,000 $0.3074
  • 10,000 $0.3010
  • 15,000 $0.2947
  • 20,000 $0.2883
  • 25,000 $0.2820
  • 250,000 $0.2756
$0.2756 / $0.3138 Buy Now
DISTI # 755-RS1E200BNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 2530
  • 1 $0.5300
  • 10 $0.4870
  • 100 $0.4390
  • 500 $0.4070
  • 1,000 $0.3470
  • 2,500 $0.3090
  • 5,000 $0.2880
  • 10,000 $0.2670
  • 25,000 $0.2650
$0.2650 / $0.5300 Buy Now
Future Electronics 30V, 68A, 3.8MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.2900
  • 5,000 $0.2800
  • 7,500 $0.2800
  • 10,000 $0.2750
  • 12,500 $0.2700
$0.2700 / $0.2900 Buy Now
Quest Components   2024
  • 1 $1.3350
  • 301 $0.5340
  • 1,499 $0.4673
$0.4673 / $1.3350 Buy Now
DISTI # RS1E200BNTB
Avnet Americas Trans MOSFET N-CH 30V ±20A 8-Pin HSOP Embossed Tape and Reel - Tape and Reel (Alt: RS1E200BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3138
  • 5,000 $0.3074
  • 10,000 $0.3010
  • 15,000 $0.2947
  • 20,000 $0.2883
  • 25,000 $0.2820
  • 250,000 $0.2756
$0.2756 / $0.3138 Buy Now
DISTI # RS1E200BNTB
Avnet Americas Trans MOSFET N-CH 30V ±20A 8-Pin HSOP Embossed Tape and Reel - Tape and Reel (Alt: RS1E200BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3138
  • 5,000 $0.3074
  • 10,000 $0.3010
  • 15,000 $0.2947
  • 20,000 $0.2883
  • 25,000 $0.2820
  • 250,000 $0.2756
$0.2756 / $0.3138 Buy Now
DISTI # 2490616
element14 Asia-Pacific MOSFET, N-CH, 30V, 20A, HSOP-8 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.5567
  • 10 $0.5112
  • 100 $0.4613
  • 500 $0.4275
  • 1,000 $0.4106
  • 5,000 $0.3930
$0.3930 / $0.5567 Buy Now
DISTI # 2490616
Farnell MOSFET, N-CH, 30V, 20A, HSOP-8 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Each 0
  • 1 $0.6092
  • 10 $0.5428
  • 100 $0.4400
  • 500 $0.4086
  • 1,000 $0.3999
  • 5,000 $0.3898
$0.3898 / $0.6092 Buy Now

Part Details for RS1E200BNTB

RS1E200BNTB CAD Models

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RS1E200BNTB Part Data Attributes

Parametric Data
RS1E200BNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1E200BNTB ROHM Semiconductor Power Field-Effect Transistor, 20A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1E200BNTB

This table gives cross-reference parts and alternative options found for RS1E200BNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E200BNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RS1E200AHTB Power Field-Effect Transistor, 30A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200BNTB vs RS1E200AHTB
Part Number Description Manufacturer Compare
RS1E200AHTB Power Field-Effect Transistor, 30A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200BNTB vs RS1E200AHTB

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