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Transistors / Power Field-Effect Transistors / RS1E200GNTB
Datasheets
RS1E200GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 20A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Part Details for RS1E200GNTB by ROHM Semiconductor

Overview of RS1E200GNTB by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense Automotive

Price & Stock for RS1E200GNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1E200GNTBCT-ND
DigiKey MOSFET N-CH 30V 20A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2460
In Stock
  • 1 $0.8200
  • 10 $0.7090
  • 100 $0.4909
  • 500 $0.4101
  • 1,000 $0.3491
  • 2,500 $0.3109
  • 5,000 $0.2945
  • 12,500 $0.2727
  • 25,000 $0.2700
$0.2700 / $0.8200 Buy Now
DISTI # RS1E200GNTB
Avnet Americas 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E200GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3197
  • 5,000 $0.3132
  • 10,000 $0.3067
  • 15,000 $0.3002
  • 20,000 $0.2938
  • 25,000 $0.2873
  • 250,000 $0.2808
$0.2808 / $0.3197 Buy Now
DISTI # 755-RS1E200GNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 2497
  • 1 $0.5700
  • 10 $0.4920
  • 100 $0.3850
  • 500 $0.3480
  • 1,000 $0.3020
  • 2,500 $0.2900
  • 5,000 $0.2830
  • 10,000 $0.2720
  • 25,000 $0.2700
$0.2700 / $0.5700 Buy Now
Future Electronics N-Channel 30 V 4.6 mOhm 25 W Surface Mount Power Mosfet - HSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel 5
Cut Tape/Mini-Reel
  • 1 $0.6400
  • 15 $0.5750
  • 75 $0.5450
  • 250 $0.5200
  • 1,250 $0.4750
$0.4750 / $0.6400 Buy Now
Future Electronics N-Channel 30 V 4.6 mOhm 25 W Surface Mount Power Mosfet - HSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3150
  • 5,000 $0.3100
  • 7,500 $0.3050
  • 10,000 $0.3000
  • 12,500 $0.2950
$0.2950 / $0.3150 Buy Now
DISTI # RS1E200GNTB
Avnet Americas 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E200GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3197
  • 5,000 $0.3132
  • 10,000 $0.3067
  • 15,000 $0.3002
  • 20,000 $0.2938
  • 25,000 $0.2873
  • 250,000 $0.2808
$0.2808 / $0.3197 Buy Now
DISTI # RS1E200GNTB
Avnet Americas 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E200GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3197
  • 5,000 $0.3132
  • 10,000 $0.3067
  • 15,000 $0.3002
  • 20,000 $0.2938
  • 25,000 $0.2873
  • 250,000 $0.2808
$0.2808 / $0.3197 Buy Now
DISTI # RS1E200GNTB
Avnet Asia 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE (Alt: RS1E200GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for RS1E200GNTB

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RS1E200GNTB Part Data Attributes

Parametric Data
RS1E200GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1E200GNTB ROHM Semiconductor Power Field-Effect Transistor, 20A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0061 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1E200GNTB

This table gives cross-reference parts and alternative options found for RS1E200GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E200GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RS1E200AHTB Power Field-Effect Transistor, 30A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200GNTB vs RS1E200AHTB
RS1E200BNTB Power Field-Effect Transistor, 20A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200GNTB vs RS1E200BNTB
Part Number Description Manufacturer Compare
RS1E200AHTB Power Field-Effect Transistor, 30A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200GNTB vs RS1E200AHTB
RS1E200BNTB Power Field-Effect Transistor, 20A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 ROHM Semiconductor RS1E200GNTB vs RS1E200BNTB

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