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Transistors / Power Field-Effect Transistors / RS1E240GNTB
Datasheets
RS1E240GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 24A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8

Part Details for RS1E240GNTB by ROHM Semiconductor

Overview of RS1E240GNTB by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for RS1E240GNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1E240GNTBCT-ND
DigiKey MOSFET N-CH 30V 24A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3671
In Stock
  • 1 $0.9300
  • 10 $0.8040
  • 100 $0.5568
  • 500 $0.4652
  • 1,000 $0.3959
  • 2,500 $0.3526
  • 5,000 $0.3341
  • 12,500 $0.3093
  • 25,000 $0.3063
$0.3063 / $0.9300 Buy Now
DISTI # RS1E240GNTB
Avnet Americas Transistor MOSFET N-CH 30V 72A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 2500
RFQ
DISTI # 755-RS1E240GNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 2485
  • 1 $0.9300
  • 10 $0.7370
  • 100 $0.5480
  • 500 $0.4650
  • 1,000 $0.3960
  • 2,500 $0.3520
  • 5,000 $0.3330
  • 10,000 $0.3090
  • 25,000 $0.3060
$0.3060 / $0.9300 Buy Now
Future Electronics 30V, 72A, 3.3MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3300
  • 5,000 $0.3250
  • 7,500 $0.3200
  • 10,000 $0.3200
  • 12,500 $0.3100
$0.3100 / $0.3300 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 30V, 0.0044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 4000
  • 1 $1.7700
  • 1,131 $0.6195
  • 2,422 $0.5310
$0.5310 / $1.7700 Buy Now
DISTI # RS1E240GNTB
Avnet Americas Transistor MOSFET N-CH 30V 72A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 2500
RFQ
Ameya Holding Limited MOSFET N-CH 30V 24A 8-HSOP Min Qty: 1 80-Authorized Distributor
  • 1 $0.8232
  • 10 $0.6772
  • 100 $0.4234
  • 1,000 $0.3499
  • 2,500 $0.3479
$0.3479 / $0.8232 Buy Now
DISTI # RS1E240GNTB
Avnet Americas Transistor MOSFET N-CH 30V 72A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 2500
RFQ
DISTI # RS1E240GNTB
Avnet Asia Transistor MOSFET N-CH 30V 72A 8-Pin HSOP Emboss T/R (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for RS1E240GNTB

RS1E240GNTB CAD Models

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RS1E240GNTB Part Data Attributes

Parametric Data
RS1E240GNTB ROHM Semiconductor
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Compare Parts:
RS1E240GNTB ROHM Semiconductor Power Field-Effect Transistor, 24A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HSOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.0044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 96 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1E240GNTB

This table gives cross-reference parts and alternative options found for RS1E240GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E240GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC028N03LSCGATMA1 Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG RS1E240GNTB vs BSC028N03LSCGATMA1
RS1E240BNTB Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 ROHM Semiconductor RS1E240GNTB vs RS1E240BNTB
SISA12DN-T1-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix RS1E240GNTB vs SISA12DN-T1-GE3
CSD17581Q5AT 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150 Texas Instruments RS1E240GNTB vs CSD17581Q5AT
BSC032N03SG Power Field-Effect Transistor, 23A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG RS1E240GNTB vs BSC032N03SG
CSD17581Q5A 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150 Texas Instruments RS1E240GNTB vs CSD17581Q5A
SISA12DN-T1-GE3 Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK-8 Vishay Intertechnologies RS1E240GNTB vs SISA12DN-T1-GE3
SISA12ADN-T1-GE3 Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies RS1E240GNTB vs SISA12ADN-T1-GE3

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