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Transistors / Power Field-Effect Transistors / RS1E280BNTB
Datasheets
RS1E280BNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 28A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8

Part Details for RS1E280BNTB by ROHM Semiconductor

Overview of RS1E280BNTB by ROHM Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for RS1E280BNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1E280BNTBCT-ND
DigiKey MOSFET N-CH 30V 28A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 35014
In Stock
  • 1 $0.9100
  • 10 $0.7850
  • 100 $0.5431
  • 500 $0.4538
  • 1,000 $0.3862
  • 2,500 $0.3440
  • 5,000 $0.3259
  • 12,500 $0.3017
  • 25,000 $0.2988
$0.2988 / $0.9100 Buy Now
DISTI # RS1E280BNTB
Avnet Americas Trans MOSFET N-CH 30V 28A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1E280BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3345
  • 5,000 $0.3277
  • 10,000 $0.3209
  • 15,000 $0.3141
  • 20,000 $0.3074
  • 25,000 $0.3006
  • 250,000 $0.2938
$0.2938 / $0.3345 Buy Now
DISTI # 755-RS1E280BNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 18999
  • 1 $0.8900
  • 10 $0.7850
  • 100 $0.5430
  • 500 $0.4530
  • 1,000 $0.3860
  • 2,500 $0.3220
  • 5,000 $0.3150
  • 10,000 $0.3010
  • 25,000 $0.2980
$0.2980 / $0.8900 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3140
$0.3140 Buy Now
Quest Components   2050
  • 1 $1.7900
  • 224 $0.7160
  • 1,118 $0.6265
$0.6265 / $1.7900 Buy Now
DISTI # RS1E280BNTB
Avnet Americas Trans MOSFET N-CH 30V 28A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1E280BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3345
  • 5,000 $0.3277
  • 10,000 $0.3209
  • 15,000 $0.3141
  • 20,000 $0.3074
  • 25,000 $0.3006
  • 250,000 $0.2938
$0.2938 / $0.3345 Buy Now
DISTI # RS1E280BNTB
TME Transistor: N-MOSFET, unipolar, 30V, 80A, Idm: 112A, 30W, HSOP8 Min Qty: 1 0
  • 1 $0.7650
  • 5 $0.5360
  • 25 $0.4740
  • 100 $0.4250
  • 500 $0.3960
$0.3960 / $0.7650 RFQ
Ameya Holding Limited MOSFET N-CH 30V 28A 8HSOP Min Qty: 1 70-Authorized Distributor
  • 1 $0.7669
  • 10 $0.7218
  • 25 $0.6766
  • 100 $0.6315
  • 250 $0.5864
  • 500 $0.5413
  • 1,000 $0.4962
  • 2,500 $0.4511
$0.4511 / $0.7669 Buy Now
DISTI # RS1E280BNTB
Avnet Americas Trans MOSFET N-CH 30V 28A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1E280BNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3345
  • 5,000 $0.3277
  • 10,000 $0.3209
  • 15,000 $0.3141
  • 20,000 $0.3074
  • 25,000 $0.3006
  • 250,000 $0.2938
$0.2938 / $0.3345 Buy Now

Part Details for RS1E280BNTB

RS1E280BNTB CAD Models

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RS1E280BNTB Part Data Attributes

Parametric Data
RS1E280BNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1E280BNTB ROHM Semiconductor Power Field-Effect Transistor, 28A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HSOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 112 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1E280BNTB

This table gives cross-reference parts and alternative options found for RS1E280BNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E280BNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR7843CTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier RS1E280BNTB vs IRLR7843CTRRPBF
IRLR7843CTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier RS1E280BNTB vs IRLR7843CTRPBF
RS1E280GNTB Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 ROHM Semiconductor RS1E280BNTB vs RS1E280GNTB
IRLR7843HR Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier RS1E280BNTB vs IRLR7843HR
BSC022N03SGXT Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG RS1E280BNTB vs BSC022N03SGXT
IRLR7843CPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier RS1E280BNTB vs IRLR7843CPBF
IRLR7843CTRLPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier RS1E280BNTB vs IRLR7843CTRLPBF
BSC022N03SGAUMA1 Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG RS1E280BNTB vs BSC022N03SGAUMA1

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