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Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-RS1E280GNCT-ND
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DigiKey | MOSFET N-CH 30V 28A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
589 In Stock |
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$0.3613 / $0.9600 | Buy Now |
DISTI #
RS1E280GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSOP8(SINGLE) NCH DISCRETE - Tape and Reel (Alt: RS1E280GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.3757 / $0.4277 | Buy Now |
DISTI #
755-RS1E280GNTB
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 2415 |
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$0.3610 / $0.9500 | Buy Now |
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Future Electronics | 30V, 80A, 2.6MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3650 / $0.3900 | Buy Now |
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Quest Components | 2789 |
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$0.5730 / $1.9100 | Buy Now | |
DISTI #
RS1E280GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSOP8(SINGLE) NCH DISCRETE - Tape and Reel (Alt: RS1E280GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.3757 / $0.4277 | Buy Now |
DISTI #
RS1E280GNTB
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TME | Transistor: N-MOSFET, unipolar, 30V, 80A, Idm: 112A, 31W, HSOP8 Min Qty: 1 | 0 |
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$0.4690 / $0.7710 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 50-Authorized Distributor |
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$0.4610 / $0.9100 | Buy Now |
DISTI #
RS1E280GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSOP8(SINGLE) NCH DISCRETE - Tape and Reel (Alt: RS1E280GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.3757 / $0.4277 | Buy Now |
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RS1E280GNTB
ROHM Semiconductor
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Datasheet
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Compare Parts:
RS1E280GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | HSOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 112 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RS1E280GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E280GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLR7843CTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | RS1E280GNTB vs IRLR7843CTRRPBF |
IRLR7843CTRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | RS1E280GNTB vs IRLR7843CTRPBF |
IRLR7843HR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | RS1E280GNTB vs IRLR7843HR |
BSC022N03SGXT | Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RS1E280GNTB vs BSC022N03SGXT |
IRLR7843CPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | RS1E280GNTB vs IRLR7843CPBF |
IRLR7843CTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | RS1E280GNTB vs IRLR7843CTRLPBF |
BSC022N03SGAUMA1 | Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RS1E280GNTB vs BSC022N03SGAUMA1 |