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Transistors / Power Field-Effect Transistors / RS1G150MNTB
Datasheets
RS1G150MNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 15A I(D), 40V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Part Details for RS1G150MNTB by ROHM Semiconductor

Overview of RS1G150MNTB by ROHM Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Automotive

Price & Stock for RS1G150MNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1G150MNTBCT-ND
DigiKey MOSFET N-CH 40V 15A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4995
In Stock
  • 1 $0.9300
  • 10 $0.7640
  • 100 $0.5939
  • 500 $0.5034
  • 1,000 $0.4101
  • 2,500 $0.3860
  • 5,000 $0.3676
  • 12,500 $0.3507
  • 25,000 $0.3500
$0.3500 / $0.9300 Buy Now
DISTI # RS1G150MNTB
Avnet Americas Trans MOSFET N-CH 40V ±15A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1G150MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4144
  • 5,000 $0.4060
  • 10,000 $0.3976
  • 15,000 $0.3892
  • 20,000 $0.3808
  • 25,000 $0.3724
  • 250,000 $0.3640
$0.3640 / $0.4144 Buy Now
DISTI # 755-RS1G150MNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 4502
  • 1 $0.9300
  • 10 $0.7640
  • 100 $0.5940
  • 500 $0.5040
  • 1,000 $0.4110
  • 2,500 $0.3850
  • 5,000 $0.3670
  • 10,000 $0.3500
$0.3500 / $0.9300 Buy Now
Future Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3890
$0.3890 Buy Now
Quest Components   2012
  • 1 $1.0550
  • 380 $0.4220
  • 1,897 $0.3693
$0.3693 / $1.0550 Buy Now
DISTI # RS1G150MNTB
Avnet Americas Trans MOSFET N-CH 40V ±15A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1G150MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4144
  • 5,000 $0.4060
  • 10,000 $0.3976
  • 15,000 $0.3892
  • 20,000 $0.3808
  • 25,000 $0.3724
  • 250,000 $0.3640
$0.3640 / $0.4144 Buy Now
DISTI # RS1G150MNTB
TME Transistor: N-MOSFET, unipolar, 40V, 43A, Idm: 60A, 25W, HSOP8 Min Qty: 1 0
  • 1 $0.7630
  • 5 $0.4000
  • 25 $0.3610
  • 100 $0.3190
  • 500 $0.2860
$0.2860 / $0.7630 RFQ
DISTI # RS1G150MNTB
Avnet Americas Trans MOSFET N-CH 40V ±15A 8-Pin HSOP T/R - Tape and Reel (Alt: RS1G150MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4144
  • 5,000 $0.4060
  • 10,000 $0.3976
  • 15,000 $0.3892
  • 20,000 $0.3808
  • 25,000 $0.3724
  • 250,000 $0.3640
$0.3640 / $0.4144 Buy Now
DISTI # 4203066
Farnell MOSFET, N-CH, 40V, 43A, HSOP RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 2,500 $0.4052
$0.4052 Buy Now
DISTI # 4203066RL
Farnell MOSFET, N-CH, 40V, 43A, HSOP RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 2,500 $0.4052
$0.4052 Buy Now

Part Details for RS1G150MNTB

RS1G150MNTB CAD Models

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RS1G150MNTB Part Data Attributes

Parametric Data
RS1G150MNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1G150MNTB ROHM Semiconductor Power Field-Effect Transistor, 15A I(D), 40V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0133 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1G150MNTB

This table gives cross-reference parts and alternative options found for RS1G150MNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1G150MNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SQS484EN-T1_GE3 Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 Vishay Intertechnologies RS1G150MNTB vs SQS484EN-T1_GE3

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