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Transistors / Power Field-Effect Transistors / RS1L120GNTB
Datasheets
RS1L120GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 12A I(D), 60V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Part Details for RS1L120GNTB by ROHM Semiconductor

Overview of RS1L120GNTB by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for RS1L120GNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1L120GNTBCT-ND
DigiKey MOSFET N-CH 60V 12A/36A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6
In Stock
  • 1 $1.6800
  • 10 $1.3960
  • 100 $1.1108
  • 500 $0.9399
  • 1,000 $0.7975
  • 2,500 $0.7576
  • 5,000 $0.7291
  • 12,500 $0.7050
$0.7050 / $1.6800 Buy Now
DISTI # RS1L120GNTB
Avnet Americas Transistor MOSFET N-CH 60V ±36A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1L120GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8347
  • 5,000 $0.8178
  • 10,000 $0.8009
  • 15,000 $0.7840
  • 20,000 $0.7670
  • 25,000 $0.7501
  • 250,000 $0.7332
$0.7332 / $0.8347 Buy Now
DISTI # 755-RS1L120GNTB
Mouser Electronics MOSFET RS1L120GN is low on - resistance MOSFET for Switching. RoHS: Compliant 15542
  • 1 $1.6700
  • 10 $1.3900
  • 100 $1.1100
  • 250 $1.0200
  • 500 $0.9300
  • 1,000 $0.7970
  • 2,500 $0.7570
  • 5,000 $0.7290
  • 10,000 $0.7120
$0.7120 / $1.6700 Buy Now
Future Electronics 60V, 36A, 13.4MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.7400
  • 5,000 $0.7150
$0.7150 / $0.7400 Buy Now
Quest Components   5128
  • 1 $3.4920
  • 465 $1.9206
  • 1,042 $1.7460
$1.7460 / $3.4920 Buy Now
DISTI # RS1L120GNTB
Avnet Americas Transistor MOSFET N-CH 60V ±36A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1L120GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8347
  • 5,000 $0.8178
  • 10,000 $0.8009
  • 15,000 $0.7840
  • 20,000 $0.7670
  • 25,000 $0.7501
  • 250,000 $0.7332
$0.7332 / $0.8347 Buy Now
DISTI # RS1L120GNTB
TME Transistor: N-MOSFET, unipolar, 60V, 36A, Idm: 48A, 27W, HSOP8 Min Qty: 1 0
  • 1 $0.7610
  • 5 $0.6260
  • 25 $0.5530
  • 100 $0.4960
  • 500 $0.4640
$0.4640 / $0.7610 RFQ
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 155-Authorized Distributor
  • 1 $1.2926
  • 10 $1.2166
  • 25 $1.1405
  • 100 $1.0645
  • 250 $0.9885
  • 500 $0.9124
  • 1,000 $0.8364
  • 2,500 $0.7604
$0.7604 / $1.2926 Buy Now
DISTI # RS1L120GNTB
Avnet Americas Transistor MOSFET N-CH 60V ±36A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1L120GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8347
  • 5,000 $0.8178
  • 10,000 $0.8009
  • 15,000 $0.7840
  • 20,000 $0.7670
  • 25,000 $0.7501
  • 250,000 $0.7332
$0.7332 / $0.8347 Buy Now

Part Details for RS1L120GNTB

RS1L120GNTB CAD Models

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RS1L120GNTB Part Data Attributes

Parametric Data
RS1L120GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1L120GNTB ROHM Semiconductor Power Field-Effect Transistor, 12A I(D), 60V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description HSOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0198 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1L120GNTB

This table gives cross-reference parts and alternative options found for RS1L120GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1L120GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SSP7462N Power Field-Effect Transistor, 13A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8 Secos Corporation RS1L120GNTB vs SSP7462N
SSP7462N-C Power Field-Effect Transistor, 13A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, MINIATURE, SOP-8 Secos Corporation RS1L120GNTB vs SSP7462N-C

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