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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS1L180GNTBCT-ND
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DigiKey | MOSFET N-CH 60V 18A/68A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$1.1040 / $2.5400 | Buy Now |
DISTI #
RS1L180GNTB
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Avnet Americas | Power MOSFET, N Channel, 60 V, 68 A, 0.0042 ohm, HSOP, Surface Mount - Tape and Reel (Alt: RS1L180GNTB) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$1.1102 / $1.2639 | Buy Now |
DISTI #
755-RS1L180GNTB
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Mouser Electronics | MOSFET RS1L180GN is low on - resistance and high power package MOSFET for Switching. RoHS: Compliant | 2288 |
|
$1.1000 / $2.5400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.1900 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 60V, 0.0085OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 3552 |
|
$1.3575 / $3.6200 | Buy Now |
DISTI #
RS1L180GNTB
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 68 A, 0.0042 ohm, HSOP, Surface Mount - Tape and Reel (Alt: RS1L180GNTB) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$1.1102 / $1.2639 | Buy Now |
DISTI #
RS1L180GNTB
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 68 A, 0.0042 ohm, HSOP, Surface Mount - Tape and Reel (Alt: RS1L180GNTB) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$1.1102 / $1.2639 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant | Europe - 2500 |
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RFQ | |
DISTI #
RS1L180GNTB
|
Avnet Asia | Power MOSFET, N Channel, 60 V, 68 A, 0.0042 ohm, HSOP, Surface Mount (Alt: RS1L180GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
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RS1L180GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1L180GNTB
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-06-23 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.0085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |