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Part Details for SCT30N120 by STMicroelectronics
Overview of SCT30N120 by STMicroelectronics
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SCT30N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94X2608
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Newark | Mosfet, N Ch, 1.2Kv, 40A, Hip247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:270W Rohs Compliant: Yes |Stmicroelectronics SCT30N120 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$20.3800 / $28.6200 | Buy Now |
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DISTI #
497-14960-ND
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DigiKey | SICFET N-CH 1200V 40A HIP247 Min Qty: 1 Lead time: 41 Weeks Container: Tube | Temporarily Out of Stock |
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$15.6429 / $23.5900 | Buy Now |
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DISTI #
511-SCT30N120
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Mouser Electronics | MOSFET 1200V silicon carbide MOSFET RoHS: Compliant | 0 |
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$16.2200 / $23.5900 | Order Now |
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STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant Min Qty: 1 | 0 |
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$15.7200 / $23.1200 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 41 Weeks Container: Tube | 0Tube |
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$17.9800 / $18.8800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 41 Weeks Container: Tube | 0Tube |
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$17.9800 / $18.8800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 41 Weeks Container: Tube | 0Tube |
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$17.9800 / $18.3300 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 41 Weeks Container: Tube | 0Tube |
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$17.9800 / $18.8800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 41 Weeks Container: Tube | 0Tube |
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$17.9800 / $18.3300 | Buy Now |
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DISTI #
SCT30N120
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 34A, Idm: 90A, 270W Min Qty: 1 | 0 |
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$21.6100 / $22.7600 | RFQ |
Part Details for SCT30N120
SCT30N120 CAD Models
SCT30N120 Part Data Attributes
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SCT30N120
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT30N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 200 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 270 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |