Part Details for SEMIX453GB12E4P by SEMIKRON
Overview of SEMIX453GB12E4P by SEMIKRON
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for SEMIX453GB12E4P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SEMIX453GB12E4P
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 450A Min Qty: 1 | 0 |
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$496.2100 / $698.1300 | RFQ |
Part Details for SEMIX453GB12E4P
SEMIX453GB12E4P CAD Models
SEMIX453GB12E4P Part Data Attributes
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SEMIX453GB12E4P
SEMIKRON
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Datasheet
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SEMIX453GB12E4P
SEMIKRON
Insulated Gate Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Semikron | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 678 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X11 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 595 ns | |
| Turn-on Time-Nom (ton) | 220 ns | |
| VCEsat-Max | 2.05 V |