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Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60AC3815
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Newark | Mosfet, Np Ch, 60V, Sc-89, Transistor Polarity:N And P Channel, Continuous Drain Current Id:305Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):1.4Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SI1029X-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7340 |
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$0.3230 / $0.5100 | Buy Now |
DISTI #
96AC3672
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Newark | 60V (D-S) P&n Comp Mosfet W/Esd Protect Rohs Compliant: No |Vishay SI1029X-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 24000 |
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$0.1310 | Buy Now |
DISTI #
84W7285
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Newark | Mosfet, N And P Channel, 60V, 1.4Ohm, 305Ma, Sot-563, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:305Ma Rohs Compliant: Yes |Vishay SI1029X-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1460 / $0.1940 | Buy Now |
DISTI #
781-SI1029X-T1-GE3
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Mouser Electronics | MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR RoHS: Compliant | 72131 |
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$0.1340 / $0.4900 | Buy Now |
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Future Electronics | 60V (D-S) P&N COMP MOSFET W/ESD PROT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 180000Reel |
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$0.1400 / $0.1510 | Buy Now |
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Future Electronics | 60V (D-S) P&N COMP MOSFET W/ESD PROT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1400 / $0.1510 | Buy Now |
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Future Electronics | 60V (D-S) P&N COMP MOSFET W/ESD PROT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1850 / $0.2000 | Buy Now |
DISTI #
77251914
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Verical | Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R Min Qty: 3000 Package Multiple: 3000 | Americas - 36000 |
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$0.2812 | Buy Now |
DISTI #
SI1029X-T1-GE3
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TTI | MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 210000 In Stock |
|
$0.1380 / $0.1400 | Buy Now |
DISTI #
SI1029X-T1-GE3
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TME | Transistor: N/P-MOSFET, TrenchFET®, unipolar, complementary pair Min Qty: 1 | 0 |
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$0.1290 / $0.4740 | RFQ |
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SI1029X-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI1029X-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | LOW THRESHOLD | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.305 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.28 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI1029X-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1029X-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
DMG1029SV-7 | Small Signal Field-Effect Transistor, 0.37A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 | Diodes Incorporated | SI1029X-T1-GE3 vs DMG1029SV-7 |
DMG1029SVQ-7 | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 | Diodes Incorporated | SI1029X-T1-GE3 vs DMG1029SVQ-7 |