Part Details for SI2301BDS-T1-GE3 by Vishay Intertechnologies
Overview of SI2301BDS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI2301BDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2301BDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.1238 / $0.1573 | Buy Now |
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DISTI #
781-SI2301BDS-GE3
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Mouser Electronics | MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V RoHS: Compliant | 101062 |
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$0.1340 / $0.3700 | Buy Now |
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Future Electronics | P-CHANNEL 2.5-V (G-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1310 / $0.1430 | Buy Now |
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Future Electronics | P-CHANNEL 2.5-V (G-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1310 / $0.1430 | Buy Now |
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DISTI #
SI2301BDS-T1-GE3
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TTI | MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.1380 / $0.1520 | Buy Now |
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DISTI #
SI2301BDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.1238 / $0.1573 | Buy Now |
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DISTI #
SI2301BDS-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -20V, -2.2A, Idm: -10A, 0.45W, SOT23 Min Qty: 1 | 3000 |
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$0.1500 / $0.4400 | Buy Now |
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DISTI #
SI2301BDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.1238 / $0.1573 | Buy Now |
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DISTI #
SI2301BDS-T1-GE3
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Avnet Asia | Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SI2301BDS-T1-GE3
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EBV Elektronik | Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 3 Days | EBV - 0 |
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Buy Now |
Part Details for SI2301BDS-T1-GE3
SI2301BDS-T1-GE3 CAD Models
SI2301BDS-T1-GE3 Part Data Attributes
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SI2301BDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2301BDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 65 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2301BDS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2301BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2301BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2301BDS-T1 | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | SI2301BDS-T1-GE3 vs SI2301BDS-T1 |
| SI2301BDS-T1-E3 | TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2301BDS-T1-GE3 vs SI2301BDS-T1-E3 |
| SI2301BDS-T1-E3 | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2301BDS-T1-GE3 vs SI2301BDS-T1-E3 |
| SI2301BDS-T1-GE3 | TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2301BDS-T1-GE3 vs SI2301BDS-T1-GE3 |