Part Details for SI2324DS-T1-GE3 by Vishay Intertechnologies
Overview of SI2324DS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2324DS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
57AJ0430
|
Newark | Mosfet, N-Ch, 100V, 2.3A, Sot-23 Rohs Compliant: Yes |Vishay SI2324DS-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1072 |
|
$0.4180 / $0.6410 | Buy Now |
|
DISTI #
99W9600
|
Newark | N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI2324DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1850 / $0.2470 | Buy Now |
|
DISTI #
SI2324DS-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2324DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 6000 |
|
$0.1806 / $0.1988 | Buy Now |
|
DISTI #
78-SI2324DS-T1-GE3
|
Mouser Electronics | MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant | 103546 |
|
$0.1760 / $0.4700 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1770 / $0.1890 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1770 / $0.1890 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1770 / $0.1890 | Buy Now |
|
DISTI #
SI2324DS-T1-GE3
|
TTI | MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 18000 In Stock |
|
$0.1760 / $0.1950 | Buy Now |
|
DISTI #
SI2324DS-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2324DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 6000 |
|
$0.1806 / $0.1988 | Buy Now |
|
DISTI #
SI2324DS-T1-GE3
|
TME | Transistor: N-MOSFET, unipolar, 100V, 1.8A, 1.6W, SOT23 Min Qty: 3 | 11594 |
|
$0.2190 / $0.3550 | Buy Now |
Part Details for SI2324DS-T1-GE3
SI2324DS-T1-GE3 CAD Models
SI2324DS-T1-GE3 Part Data Attributes
|
|
SI2324DS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI2324DS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.234 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2324DS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2324DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2324DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDMA86108LZ | Single N-Channel PowerTrench® MOSFET 100V, 2.2A, 243mΩ, 3000-REEL | onsemi | SI2324DS-T1-GE3 vs FDMA86108LZ |
| SI2324DS-T1-BE3 | Small Signal Field-Effect Transistor, | Vishay Intertechnologies | SI2324DS-T1-GE3 vs SI2324DS-T1-BE3 |