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Part Details for SI2325DS-T1-E3 by Vishay Siliconix
Overview of SI2325DS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2325DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2325DS-T1-E3CT-ND
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DigiKey | MOSFET P-CH 150V 530MA SOT23-3 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18904 In Stock |
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$0.3632 / $0.9700 | Buy Now |
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DISTI #
70459507
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RS | SI2325DS-T1-E3 P-channel MOSFET Transistor, 0.53 A, 150 V, 3-Pin TO-236 | Siliconix / Vishay SI2325DS-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.8200 / $0.9700 | RFQ |
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ES Components | SIL SI2325DS-T1-E3 150V MSFET 3K/RL | 0 in Stock |
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RFQ | |
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New Advantage Corporation | Single P-Channel 150 V 1.2 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
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$0.4733 / $0.5071 | Buy Now |
Part Details for SI2325DS-T1-E3
SI2325DS-T1-E3 CAD Models
SI2325DS-T1-E3 Part Data Attributes
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SI2325DS-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2325DS-T1-E3
Vishay Siliconix
TRANSISTOR 530 mA, 150 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 0.53 A | |
| Drain-source On Resistance-Max | 1.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 16 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.75 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2325DS-T1-E3
This table gives cross-reference parts and alternative options found for SI2325DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2325DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BS170RLRMG | Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD | onsemi | SI2325DS-T1-E3 vs BS170RLRMG |
| VN0116N3P003 | Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2325DS-T1-E3 vs VN0116N3P003 |
| VN1310N3P008 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2325DS-T1-E3 vs VN1310N3P008 |
| SN7002NL6327 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SI2325DS-T1-E3 vs SN7002NL6327 |
| BSS123 | Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | SI2325DS-T1-E3 vs BSS123 |
| MMBF5103S62Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | Texas Instruments | SI2325DS-T1-E3 vs MMBF5103S62Z |
| VN1310N3P001 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | SI2325DS-T1-E3 vs VN1310N3P001 |
| MMBF5103D87Z | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | SI2325DS-T1-E3 vs MMBF5103D87Z |
| SSM3J313T | TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSM, 2-3S1A, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | SI2325DS-T1-E3 vs SSM3J313T |
| ZVP4424CSTOF | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | SI2325DS-T1-E3 vs ZVP4424CSTOF |