Part Details for SI3430DV-T1-GE3 by Vishay Intertechnologies
Overview of SI3430DV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI3430DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R4923
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Newark | N Ch Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:2.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:2W Rohs Compliant: Yes |Vishay SI3430DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4790 / $0.5660 | Buy Now |
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DISTI #
26R1863
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Newark | N Channel Mosfet, 100V, 2.4A, Tsop-6, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:2.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI3430DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.7060 | Buy Now |
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DISTI #
SI3430DV-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.4860 / $0.6174 | Buy Now |
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DISTI #
781-SI3430DV-GE3
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Mouser Electronics | MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant | 2940 |
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$0.4500 / $1.2000 | Buy Now |
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Future Electronics | MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4400 / $0.4700 | Buy Now |
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DISTI #
SI3430DV-T1-GE3
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TTI | MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4500 / $0.4850 | Buy Now |
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DISTI #
SI3430DV-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.4860 / $0.6174 | Buy Now |
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DISTI #
SI3430DV-T1-GE3
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Avnet Asia | Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | 0 |
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$0.5447 / $0.6138 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 1.8A 6-TSOP | 25000 |
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RFQ | |
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CHIPMALL.COM LIMITED | Package/EnclosureTSOT-23-6 fet typeN-Channel Operating temperature-55~150 Drain-source voltage Vds100V Continuous Drain Current Id1.8ATa | 37526 |
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$0.2303 / $0.3572 | Buy Now |
Part Details for SI3430DV-T1-GE3
SI3430DV-T1-GE3 CAD Models
SI3430DV-T1-GE3 Part Data Attributes:
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SI3430DV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3430DV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3430DV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3430DV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3430DV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI3430DV-T1-E3 | TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | SI3430DV-T1-GE3 vs SI3430DV-T1-E3 |
| SI3430DV-T1-GE3 | TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | SI3430DV-T1-GE3 vs SI3430DV-T1-GE3 |