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Transistors Small Signal Field-Effect Transistors SI3459BDV-T1-GE3

SI3459BDV-T1-GE3
Description: Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Overview of SI3459BDV-T1-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 17 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
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Price & Stock for SI3459BDV-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 15R4948
Newark P Channel Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, No. Of Pins:6Pinsrohs Compliant: Yes |Vishay SI3459BDV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3700
  • 5,000 $0.3620
  • 10,000 $0.3340
  • 20,000 $0.3110
  • 30,000 $0.2900
  • 50,000 $0.2780
$0.2780 / $0.3700 Buy Now
DISTI # 84R8040
Newark P Ch Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:2W Rohs Compliant: Yes |Vishay SI3459BDV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.3810
$0.3810 Buy Now
DISTI # 96AC3676
Newark P-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SI3459BDV-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2630
$0.2630 Buy Now
DISTI # SI3459BDV-T1-GE3
Avnet Americas P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3459BDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.2625
$0.2625 Buy Now
DISTI # 781-SI3459BDV-GE3
Mouser Electronics MOSFETs -60V Vds 20V Vgs TSOP-6 RoHS: Compliant 49680
  • 1 $0.7300
  • 10 $0.6340
  • 100 $0.4350
  • 500 $0.3990
  • 1,000 $0.3400
  • 3,000 $0.3020
  • 6,000 $0.3000
$0.3000 / $0.7300 Buy Now
Future Electronics P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.2800
  • 6,000 $0.2750
  • 9,000 $0.2700
  • 12,000 $0.2650
  • 15,000 $0.2600
$0.2600 / $0.2800 Buy Now
Future Electronics P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 3,000 $0.2800
  • 6,000 $0.2750
  • 9,000 $0.2700
  • 12,000 $0.2650
  • 15,000 $0.2600
$0.2600 / $0.2800 Buy Now
DISTI # 84416344
Verical Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2430 Americas - 3000
  • 3,000 $0.2798
$0.2798 Buy Now
DISTI # 66715924
Verical Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 22 Package Multiple: 1 Date Code: 2249 Americas - 265
  • 22 $0.4123
  • 25 $0.4104
  • 100 $0.3368
  • 250 $0.2693
$0.2693 / $0.4123 Buy Now
Bristol Electronics   3858
RFQ
DISTI # SI3459BDV-T1-GE3
TTI MOSFETs -60V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.2990
  • 6,000 $0.2930
  • 9,000 $0.2870
  • 15,000 $0.2820
$0.2820 / $0.2990 Buy Now
DISTI # SI3459BDV-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -60V, -2.9A, Idm: -8A Min Qty: 1 1844
  • 1 $0.7860
  • 50 $0.5610
  • 100 $0.4750
  • 500 $0.3390
  • 1,500 $0.3020
  • 3,000 $0.2910
  • 6,000 $0.2850
  • 9,000 $0.2830
$0.2830 / $0.7860 Buy Now
DISTI # SI3459BDV-T1-GE3
Avnet Asia P-CHANNEL 60-V (D-S) MOSFET (Alt: SI3459BDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days 0
RFQ
DISTI # C1S803601332305
Chip1Stop Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant 3000
  • 3,000 $0.1950
$0.1950 Buy Now
DISTI # C1S803601769916
Chip1Stop Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant 265
  • 10 $0.4123
  • 25 $0.4104
  • 100 $0.3368
  • 250 $0.3000
$0.3000 / $0.4123 Buy Now
DISTI # SI3459BDV-T1-GE3
EBV Elektronik Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 30000
Buy Now
LCSC TSOP-6-1.5mm MOSFETs ROHS 1828
  • 1 $0.4311
  • 10 $0.3845
  • 30 $0.3619
  • 100 $0.3393
  • 500 $0.2913
  • 1,000 $0.2842
$0.2842 / $0.4311 Buy Now

CAD Models for SI3459BDV-T1-GE3 by Vishay Intertechnologies
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There are no models available for this part yet.

Part Data Attributes for SI3459BDV-T1-GE3 by Vishay Intertechnologies
Parametric Data

SI3459BDV-T1-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
0.0022 A
Drain-source On Resistance-Max
0.216 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
30 pF
JEDEC-95 Code
MO-193AA
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
3.3 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI3459BDV-T1-GE3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
    VS

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