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Part Details for SI3493BDV-T1-E3 by Vishay Siliconix
Overview of SI3493BDV-T1-E3 by Vishay Siliconix
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI3493BDV-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI3493BDV-T1-E3CT-ND
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DigiKey | MOSFET P-CH 20V 8A 6TSOP Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
44432 In Stock |
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$0.3053 / $0.9200 | Buy Now |
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Bristol Electronics | Min Qty: 9 | 35 |
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$0.5625 | Buy Now |
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Quest Components | 8 A, 20 V, 0.0275 ohm, P-CHANNEL, Si, POWER, MOSFET | 356 |
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$0.3203 / $0.6864 | Buy Now |
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Quest Components | 8 A, 20 V, 0.0275 ohm, P-CHANNEL, Si, POWER, MOSFET | 28 |
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$0.6000 / $0.7500 | Buy Now |
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New Advantage Corporation | Single P-Channel 20 V 0.0275 Ohm Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.4133 / $0.4429 | Buy Now |
Part Details for SI3493BDV-T1-E3
SI3493BDV-T1-E3 CAD Models
SI3493BDV-T1-E3 Part Data Attributes
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SI3493BDV-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI3493BDV-T1-E3
Vishay Siliconix
TRANSISTOR 8 A, 20 V, 0.0275 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0275 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.97 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3493BDV-T1-E3
This table gives cross-reference parts and alternative options found for SI3493BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3493BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI3493BDV-T1-E3 | Power Field-Effect Transistor, 8A I(D), 20V, 0.0275ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | SI3493BDV-T1-E3 vs SI3493BDV-T1-E3 |