Part Details for SI4410DYPBF by Infineon Technologies AG
Overview of SI4410DYPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI4410DYPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4410DYPBF-ND
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DigiKey | MOSFET N-CH 30V 10A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70018692
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RS | SI4410DYPBF N-channel MOSFET Transistor, 10 A, 30 V, 8-Pin SOIC | Infineon SI4410DYPBF RoHS: Not Compliant Min Qty: 3800 Package Multiple: 1 Container: Bulk | 0 |
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$0.6400 / $0.8100 | RFQ |
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Win Source Electronics | MOSFET N-CH 30V 10A 8-SOIC | 10873 |
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$1.3190 / $1.9790 | Buy Now |
Part Details for SI4410DYPBF
SI4410DYPBF CAD Models
SI4410DYPBF Part Data Attributes
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SI4410DYPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SI4410DYPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, SO-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4410DYPBF
This table gives cross-reference parts and alternative options found for SI4410DYPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4410DYPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4410DYTRPBF | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | International Rectifier | SI4410DYPBF vs SI4410DYTRPBF |
| SI4410DY_NL | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4410DYPBF vs SI4410DY_NL |
| SI4410DY-REVA | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4410DYPBF vs SI4410DY-REVA |
| SI4410DY-T1 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Siliconix | SI4410DYPBF vs SI4410DY-T1 |
| SI4410DY | 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 | Rochester Electronics LLC | SI4410DYPBF vs SI4410DY |
| SI4410DY-T1-REVA | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4410DYPBF vs SI4410DY-T1-REVA |
| SI4410DY | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | SI4410DYPBF vs SI4410DY |
| SI4410DY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | SI4410DYPBF vs SI4410DY |
| SI4410DY | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | International Rectifier | SI4410DYPBF vs SI4410DY |
| SI4410DYD84Z | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4410DYPBF vs SI4410DYD84Z |