Part Details for SI4431BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4431BDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4431BDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
15R5014
|
Newark | P Ch Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4431BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4260 / $0.5030 | Buy Now |
|
DISTI #
84R8048
|
Newark | P Channel Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4431BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.7060 | Buy Now |
|
DISTI #
SI4431BDY-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.4320 / $0.5488 | Buy Now |
|
DISTI #
SI4431BDY-T1-GE3
|
TTI | MOSFET 30V 7.5A 2.5W 30mohm @ 10V pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$0.4000 / $0.4330 | Buy Now |
|
DISTI #
SI4431BDY-T1-GE3
|
Avnet Asia | Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | 0 |
|
$0.5789 / $0.6522 | Buy Now |
Part Details for SI4431BDY-T1-GE3
SI4431BDY-T1-GE3 CAD Models
SI4431BDY-T1-GE3 Part Data Attributes
|
|
SI4431BDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4431BDY-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.7A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, P-Channel 30-V (D-S) MOSFET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | P-Channel 30-V (D-S) MOSFET | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Reference Standard | IEC61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 180 ns | |
| Turn-on Time-Max (ton) | 40 ns |