Part Details for SI4435BDY-T1-E3 by Vishay Intertechnologies
Overview of SI4435BDY-T1-E3 by Vishay Intertechnologies
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Price & Stock for SI4435BDY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3602 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, SO | 276 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, SO | 136 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, SO | 1140 |
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$1.0800 / $2.8800 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, SO | 1320 |
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$1.5000 / $4.0000 | Buy Now |
Part Details for SI4435BDY-T1-E3
SI4435BDY-T1-E3 CAD Models
SI4435BDY-T1-E3 Part Data Attributes
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SI4435BDY-T1-E3
Vishay Intertechnologies
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Datasheet
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SI4435BDY-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |