Part Details for SI4800BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4800BDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4800BDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI4800BDY-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.3375 / $0.4288 | Buy Now |
|
DISTI #
781-SI4800BDY-T1-GE3
|
Mouser Electronics | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant | 12422 |
|
$0.3120 / $0.8300 | Buy Now |
|
|
Future Electronics | N-CH REDUCED QG, FAST SWITCHING MOSF RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3000 / $0.3250 | Buy Now |
|
|
Future Electronics | N-CH REDUCED QG, FAST SWITCHING MOSF RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3000 / $0.3250 | Buy Now |
|
|
Bristol Electronics | 3089 |
|
RFQ | ||
|
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | 50 |
|
$0.4372 / $0.6558 | Buy Now |
|
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | 2471 |
|
$0.3826 / $1.0930 | Buy Now |
|
DISTI #
SI4800BDY-T1-GE3
|
TTI | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$0.3280 / $0.3550 | Buy Now |
|
DISTI #
SI4800BDY-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.3375 / $0.4288 | Buy Now |
|
DISTI #
SI4800BDY-T1-GE3
|
EBV Elektronik | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 3 Days | EBV - 0 |
|
Buy Now |
Part Details for SI4800BDY-T1-GE3
SI4800BDY-T1-GE3 CAD Models
SI4800BDY-T1-GE3 Part Data Attributes:
|
|
SI4800BDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4800BDY-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.0185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Reference Standard | IEC61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 75 ns | |
| Turn-on Time-Max (ton) | 35 ns |