Part Details for SI4835DDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4835DDY-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Price & Stock for SI4835DDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
23T8517
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Newark | Mosfet, P-Ch, 30V, 13A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SI4835DDY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 423 |
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$0.5830 / $0.6350 | Buy Now |
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DISTI #
15R5091
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Newark | P Channel Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SI4835DDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5140 / $0.5380 | Buy Now |
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DISTI #
SI4835DDY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4835DDY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
SI4835DDY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4835DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3603 / $0.4577 | Buy Now |
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DISTI #
84R8059
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Avnet Americas | Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84R8059) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Ammo Pack | 430 Partner Stock |
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$0.7820 | Buy Now |
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DISTI #
23T8517
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Avnet Americas | Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 23T8517) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 423 Partner Stock |
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$0.8740 / $1.3200 | Buy Now |
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DISTI #
781-SI4835DDY-T1-GE3
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Mouser Electronics | MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant | 3553 |
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$0.4650 / $1.1800 | Buy Now |
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Future Electronics | P-Channel 30 V 0.018 Ohm 5.6 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3550 / $0.3800 | Buy Now |
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Future Electronics | P-Channel 30 V 0.018 Ohm 5.6 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3550 / $0.3800 | Buy Now |
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Bristol Electronics | 70 |
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RFQ |
Part Details for SI4835DDY-T1-GE3
SI4835DDY-T1-GE3 CAD Models
SI4835DDY-T1-GE3 Part Data Attributes
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SI4835DDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4835DDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 18 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.6 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4835DDY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4835DDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4835DDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4835DDY-T1-GE3 | Small Signal Field-Effect Transistor, 8.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4835DDY-T1-GE3 vs SI4835DDY-T1-GE3 |