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Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4946BEY-T1-E3CT-ND
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DigiKey | MOSFET 2N-CH 60V 6.5A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16934 In Stock |
|
$0.5349 / $1.4200 | Buy Now |
DISTI #
70026118
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RS | Dual N-channel MOSFET Transistor 6.5 A 60 V 8-Pin SOIC | Siliconix / Vishay SI4946BEY-T1-E3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 5000 |
|
$1.0400 / $1.3800 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1824 |
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$0.4413 / $1.2036 | Buy Now |
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New Advantage Corporation | SI4946 Series 60 V 0.041 Ohm 25 nC Dual N-Channel SMT Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 120000 |
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$0.6133 / $0.6571 | Buy Now |
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SI4946BEY-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4946BEY-T1-E3
Vishay Siliconix
Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | MS-012, SOIC, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 7.2 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 44 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.7 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 55 ns | |
Turn-on Time-Max (ton) | 35 ns |
This table gives cross-reference parts and alternative options found for SI4946BEY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4946BEY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SQ4946AEY-T1-GE3 | TRANSISTOR 7000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4946BEY-T1-E3 vs SQ4946AEY-T1-GE3 |
SQ4946AEY-T1_GE3 | Small Signal Field-Effect Transistor, 7A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | SI4946BEY-T1-E3 vs SQ4946AEY-T1_GE3 |
SI4946BEY-T1-GE3 | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946BEY-T1-GE3 |
SI4946EY-T1 | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946EY-T1 |
SI4946EY-T1-E3 | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946EY-T1-E3 |
SI4946EY-E3 | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946EY-E3 |