Part Details for SI5908DC-T1-E3 by Vishay Intertechnologies
Overview of SI5908DC-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI5908DC-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2675
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Newark | Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant: Yes |Vishay SI5908DC-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 7110 |
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$0.8730 / $1.4900 | Buy Now |
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DISTI #
69W7211
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Newark | Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8, Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.4A, On Resistance Rds(On):0.032Ohm, Transistor Mounting:Surface Mount, Power Dissipation Pd:1.1Wrohs Compliant: Yes |Vishay SI5908DC-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.8530 | Buy Now |
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DISTI #
57J5697
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Newark | Dual N Channel Mosfet, 20V, 1206, Full Reel, Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.9A, On Resistance Rds(On):0.032Ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:1V Rohs Compliant: Yes |Vishay SI5908DC-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5360 / $0.6280 | Buy Now |
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DISTI #
SI5908DC-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5908DC-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.5400 / $0.6860 | Buy Now |
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DISTI #
781-SI5908DC-T1-E3
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Mouser Electronics | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant | 13333 |
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$0.5120 / $1.3300 | Buy Now |
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Future Electronics | DUAL N-CH 1206-8 CHIPFET 20V 40MOHM @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.4900 / $0.5150 | Buy Now |
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Future Electronics | DUAL N-CH 1206-8 CHIPFET 20V 40MOHM @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel | 0Reel |
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$0.4900 / $0.5150 | Buy Now |
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DISTI #
SI5908DC-T1-E3
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TTI | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 57000 In Stock |
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$0.5010 / $0.5450 | Buy Now |
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CHIPMALL.COM LIMITED | SMD-8P MOSFETs ROHS | 3000 |
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$1.4001 | Buy Now |
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DISTI #
SI5908DC-T1-E3
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EBV Elektronik | Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R (Alt: SI5908DC-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 3000 |
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Buy Now |
Part Details for SI5908DC-T1-E3
SI5908DC-T1-E3 CAD Models
SI5908DC-T1-E3 Part Data Attributes
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SI5908DC-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI5908DC-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.4A I(D), 20V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1206-8, CHIPFET-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, 1206-8, CHIPFET-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |