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Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7113DN-T1-GE3CT-ND
|
DigiKey | MOSFET P-CH 100V 13.2A PPAK Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11103 In Stock |
|
$0.6011 / $1.6000 | Buy Now |
DISTI #
70459556
|
RS | 100V 13.2A 52W 134mohm @ 10V | Siliconix / Vishay SI7113DN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.3600 / $1.6000 | RFQ |
|
ES Components | SIL SI7113DN-T1-GE3 3K REEL | 0 in Stock |
|
RFQ | |
|
New Advantage Corporation | Single P-Channel 100 V 0.134 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 153000 |
|
$0.7533 / $0.8071 | Buy Now |
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SI7113DN-T1-GE3
Vishay Siliconix
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Datasheet
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Compare Parts:
SI7113DN-T1-GE3
Vishay Siliconix
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 13.2 A | |
Drain-source On Resistance-Max | 0.134 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -50 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 38 ns |