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Part Details for SI7115DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7115DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7115DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97W2690
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Newark | Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant: Yes |Vishay SI7115DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.3200 / $2.2400 | Buy Now |
|
DISTI #
SI7115DN-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7115DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.9045 / $1.1490 | Buy Now |
|
DISTI #
SI7115DN-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7115DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.9045 / $1.1490 | Buy Now |
|
DISTI #
97W2690
|
Avnet Americas | Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R - Bulk (Alt: 97W2690) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk | 0 |
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$1.5300 / $2.2400 | Buy Now |
|
DISTI #
781-SI7115DN-T1-GE3
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Mouser Electronics | MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 7012 |
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$0.8370 / $2.0000 | Buy Now |
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Future Electronics | Single P-Channel 150 V 295 mOhm 42 nC 52 W SMT Mosfet - PowerPAK ChipFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks Container: Reel | 78000Reel |
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$0.8250 | Buy Now |
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Future Electronics | Single P-Channel 150 V 295 mOhm 42 nC 52 W SMT Mosfet - PowerPAK ChipFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$0.8250 | Buy Now |
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DISTI #
78810518
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Verical | Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2351 | Americas - 54000 |
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$1.0061 | Buy Now |
|
DISTI #
66385194
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Verical | Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 27 Package Multiple: 1 Date Code: 2238 | Americas - 2325 |
|
$0.8613 / $1.1825 | Buy Now |
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Bristol Electronics | 30 |
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RFQ |
Part Details for SI7115DN-T1-GE3
SI7115DN-T1-GE3 CAD Models
SI7115DN-T1-GE3 Part Data Attributes
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SI7115DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7115DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 2.3A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.295 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |