Part Details for SI7998DP-T1-GE3 by Vishay Intertechnologies
Overview of SI7998DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SI7998DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0474
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Newark | Dual Mosfet, n-Ch, 30V, 30A, Powerpak So Rohs Compliant: Yes |Vishay SI7998DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 13865 |
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$1.0900 / $1.6600 | Buy Now |
DISTI #
15R5242
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Newark | Dual N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI7998DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6120 / $0.7230 | Buy Now |
DISTI #
SI7998DP-T1-GE3
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Avnet Americas | Trans MOSFET Array N-CH 30V 15A/21A 8-Pin PowerPAK SO - Tape and Reel (Alt: SI7998DP-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.6210 / $0.7682 | Buy Now |
DISTI #
SI7998DP-T1-GE3
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Avnet Americas | Trans MOSFET Array N-CH 30V 15A/21A 8-Pin PowerPAK SO - Tape and Reel (Alt: SI7998DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.6210 / $0.7889 | Buy Now |
DISTI #
781-SI7998DP-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 5914 |
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$0.6580 / $1.5300 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.0093 Ohm 40 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5950 / $0.6150 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.0093 Ohm 40 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5950 / $0.6150 | Buy Now |
DISTI #
SI7998DP-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.6090 / $0.6340 | Buy Now |
DISTI #
SI7998DP-T1-GE3
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Avnet Americas | Trans MOSFET Array N-CH 30V 15A/21A 8-Pin PowerPAK SO - Tape and Reel (Alt: SI7998DP-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
$0.6210 / $0.7682 | Buy Now |
DISTI #
SI7998DP-T1-GE3
|
Avnet Americas | Trans MOSFET Array N-CH 30V 15A/21A 8-Pin PowerPAK SO - Tape and Reel (Alt: SI7998DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.6210 / $0.7889 | Buy Now |
Part Details for SI7998DP-T1-GE3
SI7998DP-T1-GE3 CAD Models
SI7998DP-T1-GE3 Part Data Attributes:
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SI7998DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7998DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 15A I(D), 30V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0093 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |