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Part Details for SIA416DJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA416DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIA416DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
19X1926
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Newark | Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Vishay SIA416DJ-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14990 |
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$0.4680 / $0.7080 | Buy Now |
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DISTI #
99W9412
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Newark | Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V |Vishay SIA416DJ-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2380 / $0.3170 | Buy Now |
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DISTI #
SIA416DJ-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days Container: Reel | 48000 |
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$0.1989 / $0.2133 | Buy Now |
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DISTI #
SIA416DJ-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.3264 | Buy Now |
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DISTI #
78-SIA416DJ-T1-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant | 41500 |
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$0.2300 / $0.6400 | Buy Now |
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DISTI #
E02:0323_06609535
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Arrow Electronics | Trans MOSFET N-CH 100V 11.3A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 32 Weeks Date Code: 2418 | Europe - 9000 |
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$0.2262 | Buy Now |
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DISTI #
V72:2272_09216729
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Arrow Electronics | Trans MOSFET N-CH 100V 11.3A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 44 Weeks Date Code: 2245 Container: Cut Strips | Americas - 18 |
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$0.2308 / $0.3556 | Buy Now |
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Future Electronics | N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2200 / $0.2350 | Buy Now |
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Future Electronics | N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks Container: Reel | 0Reel |
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$0.2200 / $0.2350 | Buy Now |
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Future Electronics | N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.2200 / $0.2350 | Buy Now |
Part Details for SIA416DJ-T1-GE3
SIA416DJ-T1-GE3 CAD Models
SIA416DJ-T1-GE3 Part Data Attributes
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SIA416DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA416DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11.3A I(D), 100V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, S-PDSO-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 0.45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11.3 A | |
| Drain-source On Resistance-Max | 0.083 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |