Part Details for SIE802DF-T1-E3 by Vishay Intertechnologies
Overview of SIE802DF-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIE802DF-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
781-SIE802DF-T1-E3
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Mouser Electronics | MOSFET 30V 60A 125W 1.9mohm @ 10V RoHS: Compliant | 0 |
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$1.7300 / $3.5600 | Order Now |
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Bristol Electronics | 4106 |
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RFQ | ||
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Quest Components | 42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET | 3284 |
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$1.8000 / $3.6000 | Buy Now |
DISTI #
SIE802DF-T1-E3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 60A, Idm: 100A Min Qty: 3000 | 0 |
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$2.1800 | RFQ |
Part Details for SIE802DF-T1-E3
SIE802DF-T1-E3 CAD Models
SIE802DF-T1-E3 Part Data Attributes
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SIE802DF-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIE802DF-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 42.7A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POLARPAK-10
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, LEADLESS, POLARPAK-10 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 42.7 A | |
Drain-source On Resistance-Max | 0.0019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |