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Part Details for SIHF6N40D-E3 by Vishay Siliconix
Overview of SIHF6N40D-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHF6N40D-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIHF6N40D-E3-ND
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DigiKey | MOSFET N-CH 400V 6A TO220 Min Qty: 1 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$0.5022 / $1.3400 | Buy Now |
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Bristol Electronics | 500 |
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RFQ |
Part Details for SIHF6N40D-E3
SIHF6N40D-E3 CAD Models
SIHF6N40D-E3 Part Data Attributes:
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SIHF6N40D-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHF6N40D-E3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 104 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF6N40D-E3
This table gives cross-reference parts and alternative options found for SIHF6N40D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF6N40D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PJP6NA40_T0_00001 | Power Field-Effect Transistor, 6A I(D), 400V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | PanJit Semiconductor | SIHF6N40D-E3 vs PJP6NA40_T0_00001 |
| FQPF6N40CT_NL | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SIHF6N40D-E3 vs FQPF6N40CT_NL |
| SIHF6N40D-E3 | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | SIHF6N40D-E3 vs SIHF6N40D-E3 |
| PJF730 | Power Field-Effect Transistor, 5.5A I(D), 400V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN | PanJit Semiconductor | SIHF6N40D-E3 vs PJF730 |
| 6N40G-TF3-T | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | SIHF6N40D-E3 vs 6N40G-TF3-T |
| UF730G-TF3-T | Power Field-Effect Transistor, 6.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | SIHF6N40D-E3 vs UF730G-TF3-T |
| PJF6NA40_T0_00001 | Power Field-Effect Transistor, 6A I(D), 400V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB-F, 3 PIN | PanJit Semiconductor | SIHF6N40D-E3 vs PJF6NA40_T0_00001 |