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Part Details for SIHG80N60EF-GE3 by Vishay Intertechnologies
Overview of SIHG80N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for SIHG80N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
99AC9561
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Newark | Mosfet, N-Ch, 80A, 600V, To-247Ac, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.028Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SIHG80N60EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 454 |
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$9.2400 / $14.2500 | Buy Now |
|
DISTI #
SIHG80N60EF-GE3
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Avnet Americas | Transistor MOSFET N-CH 600V 80A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG80N60EF-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$12.8523 | Buy Now |
|
DISTI #
78-SIHG80N60EF-GE3
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Mouser Electronics | MOSFET 650V Vds, 30V Vgs TO-247AC RoHS: Compliant | 219 |
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$9.9900 / $15.0100 | Buy Now |
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DISTI #
V72:2272_22759366
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Arrow Electronics | Trans MOSFET N-CH 600V 80A 3-Pin(3+Tab) TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2333 Container: Cut Strips | Americas - 50 |
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$9.5120 / $14.8530 | Buy Now |
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Future Electronics | SiHG80N60EF series, N-Channel Power Mosfet 600V 80A, TO-247AC package RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 25 Lead time: 22 Weeks Container: Tube | 0Tube |
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$9.3300 | Buy Now |
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DISTI #
69863824
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Verical | Trans MOSFET N-CH 600V 80A 3-Pin(3+Tab) TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2333 | Americas - 50 |
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$9.5120 / $14.8530 | Buy Now |
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DISTI #
SIHG80N60EF-GE3
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TTI | MOSFET 650V Vds, 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 500 In Stock |
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$9.4100 / $10.1100 | Buy Now |
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DISTI #
SIHG80N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 51A, Idm: 254A, 520W, TO247AC Min Qty: 1 | 0 |
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$13.4900 / $20.2300 | RFQ |
|
DISTI #
SIHG80N60EF-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 600V 80A 3-Pin TO-247AC (Alt: SIHG80N60EF-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 22 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIHG80N60EF-GE3
SIHG80N60EF-GE3 CAD Models
SIHG80N60EF-GE3 Part Data Attributes
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SIHG80N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG80N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Date Of Intro | 2018-09-17 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1142 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 520 W | |
| Pulsed Drain Current-Max (IDM) | 254 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 660 ns | |
| Turn-on Time-Max (ton) | 305 ns |