Part Details for SIHP125N60EF-GE3 by Vishay Intertechnologies
Overview of SIHP125N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIHP125N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH5927
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Newark | Mosfet, N-Ch, 600V, 25A, 150Deg C, 179W Rohs Compliant: Yes |Vishay SIHP125N60EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$3.3500 / $5.2300 | Buy Now |
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DISTI #
SIHP125N60EF-GE3
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Avnet Americas | Power MOSFET, N Channel, 600 V, 25 A, 0.109 ohm, TO-220AB, Through Hole (Alt: SIHP125N60EF-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days | 0 |
|
$3.1029 | Buy Now |
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DISTI #
78-SIHP125N60EF-GE3
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Mouser Electronics | MOSFET N-CHANNEL 600V RoHS: Compliant | 759 |
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$2.2000 / $4.5800 | Buy Now |
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Future Electronics | MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube | 0Tube |
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$2.2900 / $2.5100 | Buy Now |
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DISTI #
SIHP125N60EF-GE3
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TTI | MOSFET N-CHANNEL 600V RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 2000 In Stock |
|
$2.1800 / $2.3300 | Buy Now |
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DISTI #
SIHP125N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 16A, Idm: 66A, 179W, TO220AB Min Qty: 1 | 0 |
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$3.4300 / $5.1500 | RFQ |
Part Details for SIHP125N60EF-GE3
SIHP125N60EF-GE3 CAD Models
SIHP125N60EF-GE3 Part Data Attributes
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SIHP125N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHP125N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Date Of Intro | 2019-06-16 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 88 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 179 W | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 106 ns | |
| Turn-on Time-Max (ton) | 104 ns |