Part Details for SIHP24N65E-GE3 by Vishay Intertechnologies
Overview of SIHP24N65E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIHP24N65E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X1943
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Newark | Power Mosfet, N Channel, 24 A, 650 V, 0.12 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SIHP24N65E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3532 |
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$3.9200 / $6.1800 | Buy Now |
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DISTI #
SIHP24N65E-GE3
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Avnet Americas | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP24N65E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$3.7177 | Buy Now |
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DISTI #
78-SIHP24N65E-GE3
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Mouser Electronics | MOSFET 650V Vds 30V Vgs TO-220AB RoHS: Compliant | 714 |
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$2.9300 / $5.6000 | Buy Now |
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DISTI #
V99:2348_09218742
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Arrow Electronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2139 | Americas - 990 |
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$1.9900 / $2.6367 | Buy Now |
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Future Electronics | E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.6000 / $2.8400 | Buy Now |
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Future Electronics | E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.6000 / $2.8400 | Buy Now |
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DISTI #
61183874
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Verical | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2139 | Americas - 990 |
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$1.9900 | Buy Now |
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DISTI #
SIHP24N65E-GE3
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TTI | MOSFET 650V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 3000 In Stock |
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$2.5900 | Buy Now |
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DISTI #
SIHP24N65E-GE3
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Avnet Americas | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP24N65E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$3.7177 | Buy Now |
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DISTI #
SIHP24N65E-GE3
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TME | Transistor: N-MOSFET, unipolar, 650V, 16A, Idm: 70A, 250W, TO220AB Min Qty: 1 | 0 |
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$3.5400 / $5.3200 | RFQ |
Part Details for SIHP24N65E-GE3
SIHP24N65E-GE3 CAD Models
SIHP24N65E-GE3 Part Data Attributes:
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SIHP24N65E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHP24N65E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 508 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |