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Part Details for SIR424DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR424DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIR424DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
01AC4968
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Newark | Mosfet, N-Ch, 20V, 30A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SIR424DP-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15785 |
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$0.6810 / $1.0300 | Buy Now |
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DISTI #
05AC9469
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Newark | Mosfet, N-Ch, 20V, 30A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SIR424DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4390 / $0.5410 | Buy Now |
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DISTI #
70AC6481
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Newark | Mosfet, N-Ch, 20V, 30A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Msl:- Rohs Compliant: Yes |Vishay SIR424DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5650 | Buy Now |
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DISTI #
SIR424DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3645 / $0.4631 | Buy Now |
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DISTI #
781-SIR424DP-GE3
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Mouser Electronics | MOSFET 20V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 18561 |
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$0.3680 / $0.9000 | Buy Now |
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Future Electronics | 20v,30a,5.5mohms,ppakso-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.3400 / $0.3600 | Buy Now |
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Future Electronics | 20v,30a,5.5mohms,ppakso-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3400 / $0.3600 | Buy Now |
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DISTI #
SIR424DP-T1-GE3
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TTI | MOSFET 20V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
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$0.3380 / $0.3650 | Buy Now |
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DISTI #
SIR424DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3645 / $0.4631 | Buy Now |
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DISTI #
SIR424DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 20V, 30A, Idm: 70A Min Qty: 3000 | 0 |
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$0.5440 | RFQ |
Part Details for SIR424DP-T1-GE3
SIR424DP-T1-GE3 CAD Models
SIR424DP-T1-GE3 Part Data Attributes:
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SIR424DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR424DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 23.4A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 23.4 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 41.7 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |