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Part Details for SIR610DP-T1-RE3 by Vishay Intertechnologies
Overview of SIR610DP-T1-RE3 by Vishay Intertechnologies
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIR610DP-T1-RE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIR610DP-T1-RE3
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Avnet Americas | Transistor MOSFET N-CH 200V 35.4A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR610DP-T1-RE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 3000 |
|
$0.8201 / $1.0419 | Buy Now |
|
DISTI #
78-SIR610DP-T1-RE3
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Mouser Electronics | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 0 |
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$0.8150 / $1.8000 | Order Now |
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Future Electronics | 200V, 31.9mohm, 35.4A, Single N-Channel, Powerpak SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.7750 | Buy Now |
|
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Future Electronics | 200V, 31.9mohm, 35.4A, Single N-Channel, Powerpak SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.7750 | Buy Now |
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DISTI #
SIR610DP-T1-RE3
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TTI | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.7700 / $0.7900 | Buy Now |
|
DISTI #
SIR610DP-T1-RE3
|
Avnet Americas | Transistor MOSFET N-CH 200V 35.4A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR610DP-T1-RE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 3000 |
|
$0.8201 / $1.0419 | Buy Now |
|
DISTI #
SIR610DP-T1-RE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 35.4A, Idm: 80A Min Qty: 3000 | 0 |
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$1.2800 | RFQ |
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DISTI #
SIR610DP-T1-RE3
|
Avnet Americas | Transistor MOSFET N-CH 200V 35.4A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR610DP-T1-RE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 3000 |
|
$0.8201 / $1.0419 | Buy Now |
|
DISTI #
SIR610DP-T1-RE3
|
Avnet Asia | Transistor MOSFET N-CH 200V 35.4A 8-Pin PowerPAK SO (Alt: SIR610DP-T1-RE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 46 Weeks, 0 Days | 0 |
|
$1.1353 / $1.2792 | Buy Now |
|
DISTI #
SIR610DP-T1-RE3
|
EBV Elektronik | Transistor MOSFET N-CH 200V 35.4A 8-Pin PowerPAK SO (Alt: SIR610DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks, 4 Days | EBV - 3000 |
|
Buy Now |
Part Details for SIR610DP-T1-RE3
SIR610DP-T1-RE3 CAD Models
SIR610DP-T1-RE3 Part Data Attributes
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|
SIR610DP-T1-RE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR610DP-T1-RE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 35.4 A | |
| Drain-source On Resistance-Max | 0.0334 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 84 ns | |
| Turn-on Time-Max (ton) | 76 ns |