Part Details for SIR770DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR770DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIR770DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR770DP-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4590 / $0.5831 | Buy Now |
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DISTI #
781-SIR770DP-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 5885 |
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$0.4250 / $1.1300 | Buy Now |
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Future Electronics | SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.4150 / $0.4350 | Buy Now |
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Future Electronics | SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4150 / $0.4350 | Buy Now |
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DISTI #
SIR770DP-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.4250 / $0.4420 | Buy Now |
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DISTI #
SIR770DP-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4590 / $0.5831 | Buy Now |
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DISTI #
SIR770DP-T1-GE3
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TME | Transistor: N-MOSFET x2 + Schottky, TrenchFET®, unipolar, 30V, 8A Min Qty: 3000 | 0 |
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$0.7000 | RFQ |
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DISTI #
SIR770DP-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4590 / $0.5831 | Buy Now |
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DISTI #
1858995
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Farnell | MOSFET,NN CH,SC DIO,30V,8A,PPAKS08 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Each | 0 |
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$0.4899 | Buy Now |
Part Details for SIR770DP-T1-GE3
SIR770DP-T1-GE3 CAD Models
SIR770DP-T1-GE3 Part Data Attributes
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SIR770DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR770DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.021 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 17.8 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR770DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR770DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR770DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7842DP | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Siliconix | SIR770DP-T1-GE3 vs SI7842DP |
| SI7872DP-T1-E3 | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWER PAK, SOP-8 | Vishay Intertechnologies | SIR770DP-T1-GE3 vs SI7872DP-T1-E3 |