Part Details for SIR770DP-T1-GE3 by Vishay Siliconix
Overview of SIR770DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SIR770DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR770DP-T1-GE3CT-ND
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DigiKey | MOSFET 2N-CH 30V 8A PPAK SO8 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4258 / $1.1300 | Buy Now |
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New Advantage Corporation | SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.8067 / $0.8643 | Buy Now |
Part Details for SIR770DP-T1-GE3
SIR770DP-T1-GE3 CAD Models
SIR770DP-T1-GE3 Part Data Attributes
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SIR770DP-T1-GE3
Vishay Siliconix
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Datasheet
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SIR770DP-T1-GE3
Vishay Siliconix
DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-C6 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.2 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 17.8 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | PURE MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIR770DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR770DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR770DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI7842DP | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Siliconix | SIR770DP-T1-GE3 vs SI7842DP |
SI7872DP-T1-E3 | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWER PAK, SOP-8 | Vishay Intertechnologies | SIR770DP-T1-GE3 vs SI7872DP-T1-E3 |