Part Details for SIRA28BDP-T1-GE3 by Vishay Intertechnologies
Overview of SIRA28BDP-T1-GE3 by Vishay Intertechnologies
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- Number of Functional Equivalents:
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SIRA28BDP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42AJ0476
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIRA28BDP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1710 | Buy Now |
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DISTI #
02AH2520
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Newark | Mosfet, N-Ch, 38A, 30V, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:38A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0061Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.4V, Power Rohs Compliant: Yes |Vishay SIRA28BDP-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3840 / $0.6000 | Buy Now |
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DISTI #
SIRA28BDP-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.1681 / $0.2135 | Buy Now |
|
DISTI #
78-SIRA28BDP-T1-GE3
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Mouser Electronics | MOSFET 30V Vds, 20/-16V Vgs PowerPAK SO-8 RoHS: Compliant | 5747 |
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$0.1590 / $0.4100 | Buy Now |
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Future Electronics | Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1550 / $0.1660 | Buy Now |
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|
Quest Components | 140 |
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$0.2750 / $0.5500 | Buy Now | |
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DISTI #
SIRA28BDP-T1-GE3
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TTI | MOSFET 30V Vds, 20/-16V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.1570 / $0.1610 | Buy Now |
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DISTI #
SIRA28BDP-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.1681 / $0.2135 | Buy Now |
|
DISTI #
SIRA28BDP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 30A, Idm: 90A, 11W Min Qty: 1 | 0 |
|
$0.2660 / $0.7710 | RFQ |
|
DISTI #
SIRA28BDP-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.1681 / $0.2135 | Buy Now |
Part Details for SIRA28BDP-T1-GE3
SIRA28BDP-T1-GE3 CAD Models
SIRA28BDP-T1-GE3 Part Data Attributes
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SIRA28BDP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA28BDP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2018-11-27 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 31 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 17 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 40 ns | |
| Turn-on Time-Max (ton) | 30 ns |