Part Details for SISS27ADN-T1-GE3 by Vishay Intertechnologies
Overview of SISS27ADN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Electronic Manufacturing
Telecommunications
Automotive
Price & Stock for SISS27ADN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57AJ0408
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Newark | Mosfet, P-Ch, 30V, 50A, Powerpak 1212-8S Rohs Compliant: Yes |Vishay SISS27ADN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 23854 |
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$0.6390 / $0.9990 | Buy Now |
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DISTI #
79AH6500
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Newark | P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SISS27ADN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3180 / $0.3820 | Buy Now |
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DISTI #
20AC3912
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Newark | P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SISS27ADN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3160 / $0.4210 | Buy Now |
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DISTI #
SISS27ADN-T1-GE3
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Avnet Americas | MOSFET P-Channel 30V 50A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SISS27ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3226 / $0.4099 | Buy Now |
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DISTI #
78-SISS27ADN-T1-GE3
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Mouser Electronics | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 17337 |
|
$0.2980 / $0.7300 | Buy Now |
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DISTI #
V72:2272_17600285
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Arrow Electronics | Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2342 Container: Cut Strips | Americas - 2890 |
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$0.3208 / $0.6816 | Buy Now |
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Future Electronics | P-Channel 30 V 5.1 mOhm 57 W TrenchFET Gen III Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.2950 / $0.3150 | Buy Now |
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Future Electronics | P-Channel 30 V 5.1 mOhm 57 W TrenchFET Gen III Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.2950 / $0.3150 | Buy Now |
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DISTI #
76874457
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Verical | Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2349 | Americas - 3000 |
|
$0.5043 | Buy Now |
|
DISTI #
73479077
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Verical | Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R Min Qty: 19 Package Multiple: 1 Date Code: 2342 | Americas - 2890 |
|
$0.3208 / $0.6162 | Buy Now |
Part Details for SISS27ADN-T1-GE3
SISS27ADN-T1-GE3 CAD Models
SISS27ADN-T1-GE3 Part Data Attributes:
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SISS27ADN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS27ADN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0051 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 440 pF | |
| JESD-30 Code | S-PDSO-N5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 102 ns | |
| Turn-on Time-Max (ton) | 45 ns |