Part Details for SIZ200DT-T1-GE3 by Vishay Intertechnologies
Overview of SIZ200DT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIZ200DT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94AC9390
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Newark | Mosfet, Dual N-Ch, 30V, 61A, Powerpair, Transistor Polarity:N Channel, Continuous Drain Current Id:61A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0045Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.4V, Power Rohs Compliant: Yes |Vishay SIZ200DT-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.6540 / $1.0200 | Buy Now |
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DISTI #
81AC3511
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Newark | Dual N-Channel 30-V (D-S) Mosfet |Vishay SIZ200DT-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3950 / $0.4040 | Buy Now |
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DISTI #
SIZ200DT-T1-GE3
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Avnet Americas | MOSFET Array Dual N-CH 30V 61A/60A 8-Pin PowerPAIR - Tape and Reel (Alt: SIZ200DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$0.4009 / $0.5094 | Buy Now |
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DISTI #
78-SIZ200DT-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S RoHS: Compliant | 0 |
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$0.4100 / $0.9900 | Order Now |
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Future Electronics | Dual N-Channel 30 V 5.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAIR 3 x 3S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3650 / $0.3850 | Buy Now |
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DISTI #
SIZ200DT-T1-GE3
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TTI | MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.3710 / $0.3860 | Buy Now |
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DISTI #
SIZ200DT-T1-GE3
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Avnet Americas | MOSFET Array Dual N-CH 30V 61A/60A 8-Pin PowerPAIR - Tape and Reel (Alt: SIZ200DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$0.4009 / $0.5094 | Buy Now |
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DISTI #
SIZ200DT-T1-GE3
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TME | Transistor: N-MOSFET x2, TrenchFET®, unipolar, 30V, 61A, Idm: 130A Min Qty: 3000 | 0 |
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$0.5580 | RFQ |
Part Details for SIZ200DT-T1-GE3
SIZ200DT-T1-GE3 CAD Models
SIZ200DT-T1-GE3 Part Data Attributes:
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SIZ200DT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIZ200DT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Date Of Intro | 2018-04-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 61 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 115 ns |