Part Details for SIZF916DT-T1-GE3 by Vishay Intertechnologies
Overview of SIZF916DT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIZF916DT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59AC7467
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Newark | Dual N-Ch 30-V (D-S) Mosfet W/Schott |Vishay SIZF916DT-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6290 / $0.6430 | Buy Now |
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DISTI #
81AC2801
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Newark | Mosfet, Dual N-Ch, 30V, 60A, Powerpair, Transistor Polarity:Dual N Channel + Schottky, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0009Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Rohs Compliant: Yes |Vishay SIZF916DT-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.0500 / $1.6300 | Buy Now |
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DISTI #
SIZF916DT-T1-GE3
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Avnet Americas | MOSFET Array Dual N-CH 30V 40A/60A 8-Pin PowerPAIR - Tape and Reel (Alt: SIZF916DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.8569 | Buy Now |
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DISTI #
78-SIZF916DT-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F RoHS: Compliant | 0 |
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$0.5910 / $1.5700 | Order Now |
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Future Electronics | Dual N-Channel 30 V 4 mOhm/1.25 mOhm SMT Power Mosfet - PowerPAIR 6 x 5F RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5950 / $0.6150 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
5795 Partner Stock |
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$0.6400 / $0.7600 | Buy Now |
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Bristol Electronics | 5862 |
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RFQ | ||
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DISTI #
SIZF916DT-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.5910 / $0.6060 | Buy Now |
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DISTI #
SIZF916DT-T1-GE3
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TME | Transistor: N-MOSFET x2 + Schottky, TrenchFET®, unipolar, 30V Min Qty: 3000 | 0 |
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$0.9000 | RFQ |
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DISTI #
SIZF916DT-T1-GE3
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Avnet Asia | MOSFET Array Dual N-CH 30V 40A/60A 8-Pin PowerPAIR (Alt: SIZF916DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | 0 |
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$0.9840 / $1.1087 | Buy Now |
Part Details for SIZF916DT-T1-GE3
SIZF916DT-T1-GE3 CAD Models
SIZF916DT-T1-GE3 Part Data Attributes:
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SIZF916DT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIZF916DT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.3 mJ | |
| Case Connection | SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 45 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 26.6 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 125 ns |