Datasheets
SKM195GAL126D by: SEMIKRON

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, CASE D62, SEMITRANS2-7

Part Details for SKM195GAL126D by SEMIKRON

Overview of SKM195GAL126D by SEMIKRON

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Price & Stock for SKM195GAL126D

Part # Distributor Description Stock Price Buy
DISTI # SKM195GAL126D
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 0
  • 1 $112.7700
  • 3 $101.3900
  • 8 $94.6200
$94.6200 / $112.7700 RFQ

Part Details for SKM195GAL126D

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SKM195GAL126D Part Data Attributes

SKM195GAL126D SEMIKRON
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SKM195GAL126D SEMIKRON Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, CASE D62, SEMITRANS2-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Part Package Code DO-204
Package Description FLANGE MOUNT, R-XUFM-X5
Pin Count 2
Manufacturer Package Code CASE D62
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 220 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
JESD-609 Code e3/e4
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 630 ns
Turn-on Time-Nom (ton) 330 ns
VCEsat-Max 2.15 V

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