Part Details for SKM200GB123D by SEMIKRON
Overview of SKM200GB123D by SEMIKRON
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SKM200GB123D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
9562915
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element14 Asia-Pacific | IGBT MODULE, HALF BRIDGE RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$135.4983 / $147.5121 | Buy Now |
Part Details for SKM200GB123D
SKM200GB123D CAD Models
SKM200GB123D Part Data Attributes
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SKM200GB123D
SEMIKRON
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Datasheet
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Compare Parts:
SKM200GB123D
SEMIKRON
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Part Package Code | DO-204 | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE D56 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Semikron | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| JESD-609 Code | e3/e4 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1300 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN/SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 670 ns | |
| Turn-on Time-Nom (ton) | 320 ns | |
| VCEsat-Max | 3 V |
Alternate Parts for SKM200GB123D
This table gives cross-reference parts and alternative options found for SKM200GB123D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKM200GB123D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1MBI200F-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 5 PIN | Fuji Electric Co Ltd | SKM200GB123D vs 1MBI200F-120 |
| 2MBI200NE-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M240, 7 PIN | Fuji Electric Co Ltd | SKM200GB123D vs 2MBI200NE-120 |
| MG150Q2YS50 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SKM200GB123D vs MG150Q2YS50 |
| 1MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | SKM200GB123D vs 1MBI200N-120 |
| MG200Q2YS11 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SKM200GB123D vs MG200Q2YS11 |
| BSM150GB120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, | Siemens | SKM200GB123D vs BSM150GB120DN2 |
| CM200DY-12H | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | SKM200GB123D vs CM200DY-12H |
| 2MBI150S-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | SKM200GB123D vs 2MBI150S-120 |
| BSM150GB120DN2E3166 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, | Siemens | SKM200GB123D vs BSM150GB120DN2E3166 |
| CM200DU-12F | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | SKM200GB123D vs CM200DU-12F |