Datasheets
SPA11N60C3 by:

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Part Details for SPA11N60C3 by Infineon Technologies AG

Overview of SPA11N60C3 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SPA11N60C3

Part # Distributor Description Stock Price Buy
DISTI # 726-SPA11N60C3
Mouser Electronics MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 RoHS: Compliant 1331
  • 1 $3.2000
  • 10 $2.6900
  • 25 $2.0000
  • 100 $1.8400
  • 250 $1.5500
  • 500 $1.5400
  • 5,000 $1.4900
$1.4900 / $3.2000 Buy Now
Ameya Holding Limited   Min Qty: 14 284
  • 14 $3.6266
  • 26 $3.5180
$3.5180 / $3.6266 Buy Now
DISTI # TMOSP7121
Rutronik N-CH 600V 6A 380mOhm TO220FP RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 400
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $1.8100
  • 150 $1.7200
  • 250 $1.6100
  • 450 $1.4500
  • 500 $1.4000
$1.4000 / $1.8100 Buy Now
Chip 1 Exchange INSTOCK 10321
RFQ
Chip1Cloud MOSFET N-CH 600V 11A TO220-3 8000
RFQ
Chips Pulse Industry Limited N-Channel 600V 11A(Tc) 3.9V @ 500uA 380mohms @ 7A 10V 33W(Tc) TO-220F(TO-220IS) MOSFETs RoHS Purchase Online, Ship Immediately 249
  • 30 $2.3307
  • 100 $2.1072
  • 500 $2.0046
  • 1,000 $1.9571
$1.9571 / $2.3307 Buy Now
LCSC 600V 11A 33W 380m10V7A 3.9V500uA 1PCSNChannel TO-220F-3 MOSFETs ROHS 208
  • 1 $3.2488
  • 10 $2.8352
  • 30 $2.5897
  • 100 $2.3413
  • 500 $2.2273
  • 1,000 $2.1746
$2.1746 / $3.2488 Buy Now
Perfect Parts Corporation   34192
RFQ

Part Details for SPA11N60C3

SPA11N60C3 CAD Models

SPA11N60C3 Part Data Attributes

SPA11N60C3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPA11N60C3 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220FP, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 340 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPA11N60C3

This table gives cross-reference parts and alternative options found for SPA11N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA11N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPP11N65C3 Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N65C3
SPP11N65C3 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC SPA11N60C3 vs SPP11N65C3
SPP11N60C3HKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N60C3HKSA1
FCP11N60F Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220, 1000-TUBE onsemi SPA11N60C3 vs FCP11N60F
SPP11N60C3XKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N60C3XKSA1
FCP11N60 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Rochester Electronics LLC SPA11N60C3 vs FCP11N60
FCP11N60 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation SPA11N60C3 vs FCP11N60
Part Number Description Manufacturer Compare
FCP11N60 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation SPA11N60C3 vs FCP11N60
SPP11N60C3XKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N60C3XKSA1
FCP11N60 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Rochester Electronics LLC SPA11N60C3 vs FCP11N60
FCP11N60F Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220, 1000-TUBE onsemi SPA11N60C3 vs FCP11N60F
SPP11N60C3HKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N60C3HKSA1
SPP11N65C3 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC SPA11N60C3 vs SPP11N65C3
SPP11N65C3 Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA11N60C3 vs SPP11N65C3

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