Part Details for SPA11N60C3XKSA1 by Infineon Technologies AG
Overview of SPA11N60C3XKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Industrial Automation
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SPA11N60C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62M0117
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Newark | Mosfet, N Channel, 650V, 11A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPA11N60C3XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.0200 / $3.3400 | Buy Now |
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DISTI #
SPA11N60C3XKSA1-ND
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DigiKey | MOSFET N-CH 600V 11A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
138 In Stock |
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$1.4979 / $3.2100 | Buy Now |
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DISTI #
SPA11N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA11N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.5222 / $1.8484 | Buy Now |
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Future Electronics | N-Channel 650 V 0.38 Ohm Cool MOS™ Power Transistor - PG-TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 2000Tube |
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$1.5400 / $1.6100 | Buy Now |
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Future Electronics | N-Channel 650 V 0.38 Ohm Cool MOS™ Power Transistor - PG-TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$1.5400 / $1.6100 | Buy Now |
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DISTI #
SPA11N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA11N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.5222 / $1.8484 | Buy Now |
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Ameya Holding Limited | Min Qty: 50 | 284 |
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$2.6648 / $2.9610 | Buy Now |
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DISTI #
SPA11N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA11N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.5222 / $1.8484 | Buy Now |
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DISTI #
SP000216312
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EBV Elektronik | Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube (Alt: SP000216312) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 2 Weeks, 2 Days | EBV - 15500 |
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Buy Now | |
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DISTI #
1471770
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element14 Asia-Pacific | MOSFET, N, 600V, TO-220F RoHS: Compliant Min Qty: 1 Container: Each | 452 |
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$1.6334 / $3.3546 | Buy Now |
Part Details for SPA11N60C3XKSA1
SPA11N60C3XKSA1 CAD Models
SPA11N60C3XKSA1 Part Data Attributes
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SPA11N60C3XKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
SPA11N60C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPA11N60C3XKSA1
This table gives cross-reference parts and alternative options found for SPA11N60C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA11N60C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STFU15NM65N | N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package | STMicroelectronics | SPA11N60C3XKSA1 vs STFU15NM65N |
| Q67040-S4408 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | Infineon Technologies AG | SPA11N60C3XKSA1 vs Q67040-S4408 |
| SSF11NS65F | Power Field-Effect Transistor, 11A I(D), 650V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPA11N60C3XKSA1 vs SSF11NS65F |
| LSD11N65E | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | SPA11N60C3XKSA1 vs LSD11N65E |
| SSF11NS65UF | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPA11N60C3XKSA1 vs SSF11NS65UF |
| SPA11N60C3E8185 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SPA11N60C3XKSA1 vs SPA11N60C3E8185 |
| STF11NM65N | N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package | STMicroelectronics | SPA11N60C3XKSA1 vs STF11NM65N |
| SIHA12N60E-E3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | SPA11N60C3XKSA1 vs SIHA12N60E-E3 |
| LSD11N70 | Power Field-Effect Transistor, 11A I(D), 700V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | SPA11N60C3XKSA1 vs LSD11N70 |
| SIHF12N60E-GE3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3 | Vishay Intertechnologies | SPA11N60C3XKSA1 vs SIHF12N60E-GE3 |